NTHL160N120SC1 Datasheet. Specs and Replacement

Type Designator: NTHL160N120SC1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 119 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.224 Ohm

Package: TO-247

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NTHL160N120SC1 datasheet

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NTHL160N120SC1

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NTHL160N120SC1

NTHL110N65S3F MOSFET Power, N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(on) MAX ID MAX charge performance. This advanced technology is tailored to... See More ⇒

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MOSFET Power, N-Channel, SUPERFET III, FRFET 650 V, 20 A, 190 mW NTHL190N65S3HF www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor s brand-new high VDSS RDS(on) MAX ID MAX voltage super-junction (SJ) MOSFET family that is utilizing charge 650 V 190 m @ 10 V 20 A balance technology for outstanding low on-resistance and lower gate charge performance. This advan... See More ⇒

Detailed specifications: NTHL040N120SC1, NTHL040N65S3HF, NTHL050N65S3HF, NTHL060N090SC1, NTHL080N120SC1, NTHL080N120SC1A, NTHL095N65S3HF, NTHL110N65S3F, IRF630, NTHL190N65S3HF, NTHLD040N65S3HF, NTHS5404T1, NTHS5441, NTLJS17D0P03P8Z, NTLUD3A260PZ, NTLUS3A40PZ, NTMD6P02R2

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