PJM02N60SA Datasheet. Specs and Replacement

Type Designator: PJM02N60SA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: SOT23

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PJM02N60SA datasheet

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PJM02N60SA

PJM02 60SA N- Enhancement Mode Field Effect Transistor Features SOT-23 R ... See More ⇒

Detailed specifications: NVTFS6H860N, NVTFS6H860NL, NVTFS6H880N, NVTFS6H880NL, NVTFS6H888N, NVTFS6H888NL, NVTFS9D6P04M8L, STD25P03L, IRF3710, PJM07P20SA, PJM10H03NSC, PJM138NSA, PJM2300NSA, PJM2300NSA-L, PJM2301PSA, PJM2301PSA-S, PJM2302NSA

Keywords - PJM02N60SA MOSFET specs

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