PJM02N60SA MOSFET. Datasheet pdf. Equivalent
Type Designator: PJM02N60SA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.5 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 34 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: SOT23
PJM02N60SA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJM02N60SA Datasheet (PDF)
..1. Size:1420K pjsemi
pjm02n60sa.pdf
pjm02n60sa.pdf
PJM02 60SAN- Enhancement Mode Field Effect TransistorFeaturesSOT-23 R
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .