PJM07P20SA Datasheet. Specs and Replacement

Type Designator: PJM07P20SA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT23

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PJM07P20SA datasheet

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PJM07P20SA

PJM07P20SA P Enhancement Field Effect Transistor SOT-23 Features VDS=-20V, ID=-7A RDS(on)=30m (Max.)@VGS=-10V High density cell design for ultra low RDS(ON) Low gate charge 1. Gate 2.Source 3.Drain Applications Schematic Diagram Load Switch and in PWM Applications Drain 3 1 Gate Source 2 Absolute Maximum Ratings Ratings at TA =25 unless otherwise speci... See More ⇒

Detailed specifications: NVTFS6H860NL, NVTFS6H880N, NVTFS6H880NL, NVTFS6H888N, NVTFS6H888NL, NVTFS9D6P04M8L, STD25P03L, PJM02N60SA, 10N60, PJM10H03NSC, PJM138NSA, PJM2300NSA, PJM2300NSA-L, PJM2301PSA, PJM2301PSA-S, PJM2302NSA, PJM2302NSA-S

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