PJM07P20SA Datasheet and Replacement
Type Designator: PJM07P20SA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT23
PJM07P20SA substitution
PJM07P20SA Datasheet (PDF)
pjm07p20sa.pdf

PJM07P20SAP Enhancement Field Effect TransistorSOT-23Features VDS=-20V, ID=-7ARDS(on)=30m (Max.)@VGS=-10V High density cell design for ultra low RDS(ON) Low gate charge 1. Gate 2.Source 3.Drain ApplicationsSchematic Diagram Load Switch and in PWM ApplicationsDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise speci
Datasheet: NVTFS6H860NL , NVTFS6H880N , NVTFS6H880NL , NVTFS6H888N , NVTFS6H888NL , NVTFS9D6P04M8L , STD25P03L , PJM02N60SA , IRFB4110 , PJM10H03NSC , PJM138NSA , PJM2300NSA , PJM2300NSA-L , PJM2301PSA , PJM2301PSA-S , PJM2302NSA , PJM2302NSA-S .
History: IRF7458PBF | NTB5860NL | SML1004R2KN | RUQ050N02FRA | IRLHM620 | S70N08S | WTX1012
Keywords - PJM07P20SA MOSFET datasheet
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History: IRF7458PBF | NTB5860NL | SML1004R2KN | RUQ050N02FRA | IRLHM620 | S70N08S | WTX1012



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