PJM07P20SA PDF and Equivalents Search

 

PJM07P20SA PDF Specs and Replacement


   Type Designator: PJM07P20SA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23
 

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PJM07P20SA PDF Specs

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PJM07P20SA

PJM07P20SA P Enhancement Field Effect Transistor SOT-23 Features VDS=-20V, ID=-7A RDS(on)=30m (Max.)@VGS=-10V High density cell design for ultra low RDS(ON) Low gate charge 1. Gate 2.Source 3.Drain Applications Schematic Diagram Load Switch and in PWM Applications Drain 3 1 Gate Source 2 Absolute Maximum Ratings Ratings at TA =25 unless otherwise speci... See More ⇒

Detailed specifications: NVTFS6H860NL , NVTFS6H880N , NVTFS6H880NL , NVTFS6H888N , NVTFS6H888NL , NVTFS9D6P04M8L , STD25P03L , PJM02N60SA , AON6414A , PJM10H03NSC , PJM138NSA , PJM2300NSA , PJM2300NSA-L , PJM2301PSA , PJM2301PSA-S , PJM2302NSA , PJM2302NSA-S .

History: SI7613DN

Keywords - PJM07P20SA MOSFET specs

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