PJM10H03NSC Datasheet. Specs and Replacement

Type Designator: PJM10H03NSC  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 24 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: SOT23

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PJM10H03NSC datasheet

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PJM10H03NSC

PJM10H03NSC N-Channel Enhancement Mode Power MOSFET SOT-23-3 Features VDS = 100V,ID = 3A RDS(ON) ... See More ⇒

Detailed specifications: NVTFS6H880N, NVTFS6H880NL, NVTFS6H888N, NVTFS6H888NL, NVTFS9D6P04M8L, STD25P03L, PJM02N60SA, PJM07P20SA, IRFB4115, PJM138NSA, PJM2300NSA, PJM2300NSA-L, PJM2301PSA, PJM2301PSA-S, PJM2302NSA, PJM2302NSA-S, PJM2305PSA

Keywords - PJM10H03NSC MOSFET specs

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