PJM10H03NSC PDF Specs and Replacement
Type Designator: PJM10H03NSC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 24 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: SOT23
PJM10H03NSC substitution
PJM10H03NSC PDF Specs
pjm10h03nsc.pdf
PJM10H03NSC N-Channel Enhancement Mode Power MOSFET SOT-23-3 Features VDS = 100V,ID = 3A RDS(ON) ... See More ⇒
Detailed specifications: NVTFS6H880N , NVTFS6H880NL , NVTFS6H888N , NVTFS6H888NL , NVTFS9D6P04M8L , STD25P03L , PJM02N60SA , PJM07P20SA , IRFB4115 , PJM138NSA , PJM2300NSA , PJM2300NSA-L , PJM2301PSA , PJM2301PSA-S , PJM2302NSA , PJM2302NSA-S , PJM2305PSA .
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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