PJM138NSA Datasheet. Specs and Replacement

Type Designator: PJM138NSA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 max nS

Cossⓘ - Output Capacitance: 12.9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm

Package: SOT23

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PJM138NSA datasheet

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PJM138NSA

PJM138NSA N- Enhancement Mode Field Effect Transistor SOT-23 Features Low gate charge and R DS(ON) Rugged and relaible Application 1. Gate 2.Source 3.Drain Direct logic-level interface TTL/CMOS Marking S3 Drivers relays, solenoids, lamps, hammers, Schematic diagram Display, memories, transistors, etc. 3Drain Battery operated systems Solid-state relays ... See More ⇒

Detailed specifications: NVTFS6H880NL, NVTFS6H888N, NVTFS6H888NL, NVTFS9D6P04M8L, STD25P03L, PJM02N60SA, PJM07P20SA, PJM10H03NSC, IRFB4227, PJM2300NSA, PJM2300NSA-L, PJM2301PSA, PJM2301PSA-S, PJM2302NSA, PJM2302NSA-S, PJM2305PSA, PJM2309PSA

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