PJM138NSA Datasheet and Replacement
Type Designator: PJM138NSA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18(max) nS
Cossⓘ - Output Capacitance: 12.9 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SOT23
PJM138NSA substitution
PJM138NSA Datasheet (PDF)
pjm138nsa.pdf

PJM138NSAN- Enhancement Mode Field Effect TransistorSOT-23Features Low gate charge and RDS(ON) Rugged and relaibleApplication1. Gate 2.Source 3.Drain Direct logic-level interface: TTL/CMOSMarking: S3 Drivers: relays, solenoids, lamps, hammers,Schematic diagramDisplay, memories, transistors, etc.3Drain Battery operated systems Solid-state relays
Datasheet: NVTFS6H880NL , NVTFS6H888N , NVTFS6H888NL , NVTFS9D6P04M8L , STD25P03L , PJM02N60SA , PJM07P20SA , PJM10H03NSC , IRF9540 , PJM2300NSA , PJM2300NSA-L , PJM2301PSA , PJM2301PSA-S , PJM2302NSA , PJM2302NSA-S , PJM2305PSA , PJM2309PSA .
History: HY3403D
Keywords - PJM138NSA MOSFET datasheet
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PJM138NSA substitution
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History: HY3403D



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