OSG60R180HSF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG60R180HSF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 163 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35.5 nC
   trⓘ - Rise Time: 20.1 nS
   Cossⓘ - Output Capacitance: 120.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO247

OSG60R180HSF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

OSG60R180HSF Datasheet (PDF)

..1. Size:1016K oriental semi
osg60r180psf osg60r180fsf osg60r180isf osg60r180hsf osg60r180ksf.pdf

OSG60R180xSF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG60R180PSF/FSF/ISF/HSF/KSF , Enhancement Mode N-Channel Power MOSFET General Description OSG60

..2. Size:872K oriental semi
osg60r180hsf.pdf