OSG60R180HSF Datasheet. Specs and Replacement

Type Designator: OSG60R180HSF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 163 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.1 nS

Cossⓘ - Output Capacitance: 120.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO247

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OSG60R180HSF substitution

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OSG60R180HSF datasheet

 ..1. Size:1016K  oriental semi
 osg60r180psf osg60r180fsf osg60r180isf osg60r180hsf osg60r180ksf.pdf pdf_icon

OSG60R180HSF

OSG60R180xSF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG60R180PSF/FSF/ISF/HSF/KSF , Enhancement Mode N-Channel Power MOSFET General Description OSG60... See More ⇒

 ..2. Size:872K  oriental semi
 osg60r180hsf.pdf pdf_icon

OSG60R180HSF

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 4.1. Size:1013K  oriental semi
 osg60r180hf.pdf pdf_icon

OSG60R180HSF

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 5.1. Size:899K  oriental semi
 osg60r180ksf.pdf pdf_icon

OSG60R180HSF

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Detailed specifications: UT6MA3, OSG55R074HSZF, OSG55R140HF, OSG55R160FZF, OSG60R180FF, OSG60R180PSF, OSG60R180FSF, OSG60R180ISF, 60N06, OSG60R180KSF, OSG60R580FTF, OSG65R1K4AF, OSG65R1K4DF, OSG65R1K4FF, OSG65R1K4PF, OSG65R260FSF_NB, OSG65R290DEF

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