OSG60R180HSF Datasheet and Replacement
Type Designator: OSG60R180HSF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 163 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20.1 nS
Cossⓘ - Output Capacitance: 120.2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO247
OSG60R180HSF substitution
OSG60R180HSF Datasheet (PDF)
osg60r180psf osg60r180fsf osg60r180isf osg60r180hsf osg60r180ksf.pdf
OSG60R180xSF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG60R180PSF/FSF/ISF/HSF/KSF , Enhancement Mode N-Channel Power MOSFET General Description OSG60
Datasheet: UT6MA3 , OSG55R074HSZF , OSG55R140HF , OSG55R160FZF , OSG60R180FF , OSG60R180PSF , OSG60R180FSF , OSG60R180ISF , RU6888R , OSG60R180KSF , OSG60R580FTF , OSG65R1K4AF , OSG65R1K4DF , OSG65R1K4FF , OSG65R1K4PF , OSG65R260FSF_NB , OSG65R290DEF .
History: SCT2750NY | IRF7306QPBF
Keywords - OSG60R180HSF MOSFET datasheet
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History: SCT2750NY | IRF7306QPBF
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