OSG65R380DEF Datasheet. Specs and Replacement
Type Designator: OSG65R380DEF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18.8 nS
Cossⓘ - Output Capacitance: 62 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO252
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OSG65R380DEF substitution
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OSG65R380DEF datasheet
Detailed specifications: OSG65R1K4DF, OSG65R1K4FF, OSG65R1K4PF, OSG65R260FSF_NB, OSG65R290DEF, OSG65R290FEF, OSG65R290KEF, OSG65R360DTF, SI2302, OSG65R380FEF, OSG65R580DEF, OSG65R900DTF, OSG70R600FF, OSG70R750DF, OSG80R1K4DF, OSG80R250FF, SFG08R06DF
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