PTP23N10A Datasheet and Replacement
Type Designator: PTP23N10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 57 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 610 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO-220
PTP23N10A substitution
PTP23N10A Datasheet (PDF)
ptp23n10a.pdf

PTP23N10A 100V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 100V 17m 57A RDS(ON),typ.=17m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Automotive G DC Motor Control D S TO-220 Ordering Information Part Number Package Brand Package No to Scale PTP2
Datasheet: PTP20N60 , PTA20N60 , PTP20N60A , PTA20N60A , PTP20N65A , PTA20N65A , PTP20N70A , PTA20N70A , IRF730 , PTP40N20 , PTP540 , PTP9506E , PTB9506E , PTW09N90 , PTW20N50A , PTW28N50 , PTW30N50EL .
History: SRT10N120LD1 | AP09N70R-H | OSG65R650P
Keywords - PTP23N10A MOSFET datasheet
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History: SRT10N120LD1 | AP09N70R-H | OSG65R650P



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