PTP23N10A Datasheet and Replacement
Type Designator: PTP23N10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 57 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 610 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO-220
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PTP23N10A Datasheet (PDF)
ptp23n10a.pdf

PTP23N10A 100V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 100V 17m 57A RDS(ON),typ.=17m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Automotive G DC Motor Control D S TO-220 Ordering Information Part Number Package Brand Package No to Scale PTP2
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: GSM4946 | IRF9328PBF | FS10UM-6 | STD5NM60-1 | BRI65R380C | MMF80R1K2PTH | APT66M60B2
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History: GSM4946 | IRF9328PBF | FS10UM-6 | STD5NM60-1 | BRI65R380C | MMF80R1K2PTH | APT66M60B2



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