PTP23N10A Datasheet. Specs and Replacement

Type Designator: PTP23N10A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 610 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO-220

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PTP23N10A datasheet

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PTP23N10A

PTP23N10A 100V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 100V 17m 57A RDS(ON),typ.=17m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Automotive G DC Motor Control D S TO-220 Ordering Information Part Number Package Brand Package No to Scale PTP2... See More ⇒

Detailed specifications: PTP20N60, PTA20N60, PTP20N60A, PTA20N60A, PTP20N65A, PTA20N65A, PTP20N70A, PTA20N70A, 2SK2842, PTP40N20, PTP540, PTP9506E, PTB9506E, PTW09N90, PTW20N50A, PTW28N50, PTW30N50EL

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