PTW36N60 Datasheet. Specs and Replacement

Type Designator: PTW36N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 650 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 650 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-3P

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PTW36N60 datasheet

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PTW36N60

PTW36N60 600V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 600V 120m 36A RDS(ON),typ.=120 m @VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver G D Electric Welder S High Efficiency SMPS TO-3P Ordering Information Package Not to Scale Part Number Pack... See More ⇒

Detailed specifications: PTP40N20, PTP540, PTP9506E, PTB9506E, PTW09N90, PTW20N50A, PTW28N50, PTW30N50EL, IRF540N, PTW50N20, PTW69N30, PTW90N20, SPTA60R130E, SPTA65R350E, SPTP65R160, SPTA65R160, RU1H150R

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.