All MOSFET. PTW36N60 Datasheet

 

PTW36N60 Datasheet and Replacement


   Type Designator: PTW36N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 650 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-3P
 

 PTW36N60 substitution

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PTW36N60 Datasheet (PDF)

 ..1. Size:661K  pipsemi
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PTW36N60

PTW36N60 600V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 600V 120m 36A RDS(ON),typ.=120 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver G D Electric Welder S High Efficiency SMPS TO-3P Ordering Information Package Not to Scale Part Number Pack

Datasheet: PTP40N20 , PTP540 , PTP9506E , PTB9506E , PTW09N90 , PTW20N50A , PTW28N50 , PTW30N50EL , 50N06 , PTW50N20 , PTW69N30 , PTW90N20 , SPTA60R130E , SPTA65R350E , SPTP65R160 , SPTA65R160 , RU1H150R .

History: MI4800

Keywords - PTW36N60 MOSFET datasheet

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