PTW36N60 Datasheet and Replacement
Type Designator: PTW36N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 650 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 150 nC
tr ⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 650 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-3P
PTW36N60 Datasheet (PDF)
ptw36n60.pdf

PTW36N60 600V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 600V 120m 36A RDS(ON),typ.=120 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver G D Electric Welder S High Efficiency SMPS TO-3P Ordering Information Package Not to Scale Part Number Pack
Datasheet: PTP40N20 , PTP540 , PTP9506E , PTB9506E , PTW09N90 , PTW20N50A , PTW28N50 , PTW30N50EL , 50N06 , PTW50N20 , PTW69N30 , PTW90N20 , SPTA60R130E , SPTA65R350E , SPTP65R160 , SPTA65R160 , RU1H150R .
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