PTW36N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: PTW36N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 650 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 36 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 150 nC
trⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 650 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-3P
PTW36N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTW36N60 Datasheet (PDF)
ptw36n60.pdf
PTW36N60 600V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 600V 120m 36A RDS(ON),typ.=120 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver G D Electric Welder S High Efficiency SMPS TO-3P Ordering Information Package Not to Scale Part Number Pack
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .