TSM650P03CX Datasheet and Replacement
Type Designator: TSM650P03CX
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19.4 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SOT23
TSM650P03CX substitution
TSM650P03CX Datasheet (PDF)
tsm650p03cx.pdf

TSM650P03CX 30V P-Channel Power MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate Parameter Value Unit 2. Source 3. Drain VDS -30 V VGS =- 10V 65 Note: VGS = -4.5V RDS(on) (max) 75 m MSL 1 (Moisture Sensitivity Level) per J-STD-020 VGS = -2.5V 100 Qg 8 nC Block Diagram Features Fast Switching Suited for -2.5V Gate Drive Ap
Datasheet: ASM6115 , MMFTP3401 , GDSSF2300 , TSM10NC60CF , TSM150P04LCS , TSM2301A , TSM240N03CX , TSM60NB1R4CH , IRF530 , TSM900N06CH , TSM900N06CP , TSM900N06CW , CI28N120SM , CI30N120SM , CI47N65 , CI60N120SM , CI72N65 .
History: STB120NF10T4 | WMM16N70SR | IPD60R600P7 | STS65R580FS2 | IRFR015 | 2SK1590 | IRF6892S
Keywords - TSM650P03CX MOSFET datasheet
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History: STB120NF10T4 | WMM16N70SR | IPD60R600P7 | STS65R580FS2 | IRFR015 | 2SK1590 | IRF6892S



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