TSM650P03CX Datasheet. Specs and Replacement

Type Designator: TSM650P03CX  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.4 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOT23

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TSM650P03CX datasheet

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TSM650P03CX

TSM650P03CX 30V P-Channel Power MOSFET SOT-23 Key Parameter Performance Pin Definition 1. Gate Parameter Value Unit 2. Source 3. Drain VDS -30 V VGS =- 10V 65 Note VGS = -4.5V RDS(on) (max) 75 m MSL 1 (Moisture Sensitivity Level) per J-STD-020 VGS = -2.5V 100 Qg 8 nC Block Diagram Features Fast Switching Suited for -2.5V Gate Drive Ap... See More ⇒

Detailed specifications: ASM6115, MMFTP3401, GDSSF2300, TSM10NC60CF, TSM150P04LCS, TSM2301A, TSM240N03CX, TSM60NB1R4CH, IRFB3607, TSM900N06CH, TSM900N06CP, TSM900N06CW, CI28N120SM, CI30N120SM, CI47N65, CI60N120SM, CI72N65

Keywords - TSM650P03CX MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.