TSM650P03CX MOSFET. Datasheet pdf. Equivalent
Type Designator: TSM650P03CX
Marking Code: 63*
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.56 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 0.9 V
Maximum Drain Current |Id|: 4.1 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 8 nC
Rise Time (tr): 19.4 nS
Drain-Source Capacitance (Cd): 85 pF
Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm
Package: SOT23
TSM650P03CX Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSM650P03CX Datasheet (PDF)
0.1. tsm650p03cx.pdf 
Size:422K _taiwansemi
TSM650P03CX 30V P-Channel Power MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate Parameter Value Unit 2. Source 3. Drain VDS -30 V VGS =- 10V 65 Note: VGS = -4.5V RDS(on) (max) 75 m MSL 1 (Moisture Sensitivity Level) per J-STD-020 VGS = -2.5V 100 Qg 8 nC Block Diagram Features Fast Switching Suited for -2.5V Gate Drive Ap
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