All MOSFET. TSM650P03CX Datasheet

 

TSM650P03CX MOSFET. Datasheet pdf. Equivalent

Type Designator: TSM650P03CX

Marking Code: 63*

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.56 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 0.9 V

Maximum Drain Current |Id|: 4.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 8 nC

Rise Time (tr): 19.4 nS

Drain-Source Capacitance (Cd): 85 pF

Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm

Package: SOT23

TSM650P03CX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSM650P03CX Datasheet (PDF)

0.1. tsm650p03cx.pdf Size:422K _taiwansemi

TSM650P03CX
TSM650P03CX

TSM650P03CX 30V P-Channel Power MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate Parameter Value Unit 2. Source 3. Drain VDS -30 V VGS =- 10V 65 Note: VGS = -4.5V RDS(on) (max) 75 m MSL 1 (Moisture Sensitivity Level) per J-STD-020 VGS = -2.5V 100 Qg 8 nC Block Diagram Features Fast Switching Suited for -2.5V Gate Drive Ap

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
Back to Top