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TSM650P03CX Spec and Replacement


   Type Designator: TSM650P03CX
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.4 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT23

 TSM650P03CX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSM650P03CX Specs

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TSM650P03CX

TSM650P03CX 30V P-Channel Power MOSFET SOT-23 Key Parameter Performance Pin Definition 1. Gate Parameter Value Unit 2. Source 3. Drain VDS -30 V VGS =- 10V 65 Note VGS = -4.5V RDS(on) (max) 75 m MSL 1 (Moisture Sensitivity Level) per J-STD-020 VGS = -2.5V 100 Qg 8 nC Block Diagram Features Fast Switching Suited for -2.5V Gate Drive Ap... See More ⇒

Detailed specifications: ASM6115 , MMFTP3401 , GDSSF2300 , TSM10NC60CF , TSM150P04LCS , TSM2301A , TSM240N03CX , TSM60NB1R4CH , IRF1010E , TSM900N06CH , TSM900N06CP , TSM900N06CW , CI28N120SM , CI30N120SM , CI47N65 , CI60N120SM , CI72N65 .

History: 2SK1295 | IRF732FI

Keywords - TSM650P03CX MOSFET specs

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