CI47N65 Datasheet. Specs and Replacement

Type Designator: CI47N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 391 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 123 nS

Cossⓘ - Output Capacitance: 114 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO247 TO3PN

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CI47N65 datasheet

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CI47N65

CI47N65 650V Super -Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant Fast Body Diode APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Absolute Maximum Ratings at Tj= 25 C unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage (VGS = ... See More ⇒

Detailed specifications: TSM240N03CX, TSM60NB1R4CH, TSM650P03CX, TSM900N06CH, TSM900N06CP, TSM900N06CW, CI28N120SM, CI30N120SM, AO4407A, CI60N120SM, CI72N65, CIM3N150, CIM6N120-220C, CIM6N120-220F, CIM6N120-247, P7515BDB, PM5G8EA

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