CI47N65 Specs and Replacement
Type Designator: CI47N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 391 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 123 nS
Cossⓘ - Output Capacitance: 114 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO247 TO3PN
CI47N65 substitution
CI47N65 datasheet
ci47n65.pdf
CI47N65 650V Super -Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant Fast Body Diode APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Absolute Maximum Ratings at Tj= 25 C unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage (VGS = ... See More ⇒
Detailed specifications: TSM240N03CX , TSM60NB1R4CH , TSM650P03CX , TSM900N06CH , TSM900N06CP , TSM900N06CW , CI28N120SM , CI30N120SM , AON7506 , CI60N120SM , CI72N65 , CIM3N150 , CIM6N120-220C , CIM6N120-220F , CIM6N120-247 , P7515BDB , PM5G8EA .
Keywords - CI47N65 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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