All MOSFET. CI47N65 Datasheet

 

CI47N65 Datasheet and Replacement


   Type Designator: CI47N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 391 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 123 nS
   Cossⓘ - Output Capacitance: 114 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO247 TO3PN
 

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CI47N65 Datasheet (PDF)

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CI47N65

CI47N65650V Super -Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Fast Body DiodeAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings at Tj= 25C unless otherwise notedParameter Symbol Value UnitDrain-Source Voltage (VGS =

Datasheet: TSM240N03CX , TSM60NB1R4CH , TSM650P03CX , TSM900N06CH , TSM900N06CP , TSM900N06CW , CI28N120SM , CI30N120SM , 2N7002 , CI60N120SM , CI72N65 , CIM3N150 , CIM6N120-220C , CIM6N120-220F , CIM6N120-247 , P7515BDB , PM5G8EA .

History: STD22NM20NT4

Keywords - CI47N65 MOSFET datasheet

 CI47N65 cross reference
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