All MOSFET. CI47N65 Datasheet


CI47N65 MOSFET. Datasheet pdf. Equivalent

Type Designator: CI47N65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 391 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 47 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 78 nC

Rise Time (tr): 123 nS

Drain-Source Capacitance (Cd): 114 pF

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: TO247 TO3PN

CI47N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


CI47N65 Datasheet (PDF)

0.1. ci47n65.pdf Size:797K _tokmas


CI47N65650V Super -Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Fast Body DiodeAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings at Tj= 25C unless otherwise notedParameter Symbol Value UnitDrain-Source Voltage (VGS =

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .


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