All MOSFET. CI72N65 Datasheet

 

CI72N65 Datasheet and Replacement


   Type Designator: CI72N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 72 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 221 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: TO247
 

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CI72N65 Datasheet (PDF)

 ..1. Size:785K  tokmas
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CI72N65

SJMOS N-MOSFETCI72N65FeaturesProduct Summary Ultra-fast body diode VDS650V Very low FOM RDS(on)QgRDS(on) typ. 44m Easy to use/driveID72AApplications100% DVDS Tested Switch Mode Power Supply (SMPS)100% Avalanche Tested Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) LLC Half-bridge ChargerKey Performance Parame

Datasheet: TSM650P03CX , TSM900N06CH , TSM900N06CP , TSM900N06CW , CI28N120SM , CI30N120SM , CI47N65 , CI60N120SM , IRF1407 , CIM3N150 , CIM6N120-220C , CIM6N120-220F , CIM6N120-247 , P7515BDB , PM5G8EA , PR804BA33 , QM0005D .

History: RQ3E180AJ

Keywords - CI72N65 MOSFET datasheet

 CI72N65 cross reference
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