All MOSFET. CI72N65 Datasheet

 

CI72N65 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CI72N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 72 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 165 nC
   trⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 221 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: TO247

 CI72N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CI72N65 Datasheet (PDF)

 ..1. Size:785K  tokmas
 ci72n65.pdf

CI72N65 CI72N65

SJMOS N-MOSFETCI72N65FeaturesProduct Summary Ultra-fast body diode VDS650V Very low FOM RDS(on)QgRDS(on) typ. 44m Easy to use/driveID72AApplications100% DVDS Tested Switch Mode Power Supply (SMPS)100% Avalanche Tested Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) LLC Half-bridge ChargerKey Performance Parame

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