CI72N65 MOSFET. Datasheet pdf. Equivalent
Type Designator: CI72N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 500 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 72 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 165 nC
Rise Time (tr): 83 nS
Drain-Source Capacitance (Cd): 221 pF
Maximum Drain-Source On-State Resistance (Rds): 0.044 Ohm
Package: TO247
CI72N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CI72N65 Datasheet (PDF)
0.1. ci72n65.pdf 
Size:785K _tokmas
SJMOS N-MOSFETCI72N65FeaturesProduct Summary Ultra-fast body diode VDS650V Very low FOM RDS(on)QgRDS(on) typ. 44m Easy to use/driveID72AApplications100% DVDS Tested Switch Mode Power Supply (SMPS)100% Avalanche Tested Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) LLC Half-bridge ChargerKey Performance Parame
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