All MOSFET. PR804BA33 Datasheet

 

PR804BA33 MOSFET. Datasheet pdf. Equivalent

Type Designator: PR804BA33

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.3 V

Maximum Drain Current |Id|: 149 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 62.8 nC

Rise Time (tr): 130 nS

Drain-Source Capacitance (Cd): 1513 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0014 Ohm

Package: POWERFET3X3

PR804BA33 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PR804BA33 Datasheet (PDF)

0.1. pr804ba33.pdf Size:906K _unikc

PR804BA33
PR804BA33

PR804BA33N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.4m @VGS = 10V30V 149AABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C149TC = 100 C94IDContinuous Drain Current4TA = 25 C37ATA= 70 C

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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