All MOSFET. PR804BA33 Datasheet

 

PR804BA33 Datasheet and Replacement


   Type Designator: PR804BA33
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 149 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 1513 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: POWERFET3X3
 

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PR804BA33 Datasheet (PDF)

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PR804BA33

PR804BA33N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.4m @VGS = 10V30V 149AABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C149TC = 100 C94IDContinuous Drain Current4TA = 25 C37ATA= 70 C

Datasheet: CI60N120SM , CI72N65 , CIM3N150 , CIM6N120-220C , CIM6N120-220F , CIM6N120-247 , P7515BDB , PM5G8EA , 5N65 , QM0005D , QN4103M6N , ISCNH310P , ISCNH320K , ISCNH325W , ISCNH327P , ISCNH328W , ISCNH339D .

History: SSI65R190S2 | FDMS86263P | NTD12N10T4 | 2SK2318 | SWU12N70D

Keywords - PR804BA33 MOSFET datasheet

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