All MOSFET. PR804BA33 Datasheet

 

PR804BA33 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PR804BA33
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 149 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 62.8 nC
   trⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 1513 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: POWERFET3X3

 PR804BA33 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PR804BA33 Datasheet (PDF)

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pr804ba33.pdf

PR804BA33
PR804BA33

PR804BA33N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.4m @VGS = 10V30V 149AABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C149TC = 100 C94IDContinuous Drain Current4TA = 25 C37ATA= 70 C

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BS170RLRAG

 

 
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