PR804BA33 Datasheet. Specs and Replacement
Type Designator: PR804BA33 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 149 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 1513 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: POWERFET3X3
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PR804BA33 datasheet
pr804ba33.pdf
PR804BA33 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.4m @VGS = 10V 30V 149A ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TC = 25 C 149 TC = 100 C 94 ID Continuous Drain Current4 TA = 25 C 37 A TA= 70 C ... See More ⇒
Detailed specifications: CI60N120SM, CI72N65, CIM3N150, CIM6N120-220C, CIM6N120-220F, CIM6N120-247, P7515BDB, PM5G8EA, IRF1407, QM0005D, QN4103M6N, ISCNH310P, ISCNH320K, ISCNH325W, ISCNH327P, ISCNH328W, ISCNH339D
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