PR804BA33 PDF and Equivalents Search

 

PR804BA33 Specs and Replacement


   Type Designator: PR804BA33
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 149 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 1513 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: POWERFET3X3
 

 PR804BA33 substitution

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PR804BA33 datasheet

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 pr804ba33.pdf pdf_icon

PR804BA33

PR804BA33 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.4m @VGS = 10V 30V 149A ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TC = 25 C 149 TC = 100 C 94 ID Continuous Drain Current4 TA = 25 C 37 A TA= 70 C ... See More ⇒

Detailed specifications: CI60N120SM , CI72N65 , CIM3N150 , CIM6N120-220C , CIM6N120-220F , CIM6N120-247 , P7515BDB , PM5G8EA , 2SK3568 , QM0005D , QN4103M6N , ISCNH310P , ISCNH320K , ISCNH325W , ISCNH327P , ISCNH328W , ISCNH339D .

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