PR804BA33 Spec and Replacement
Type Designator: PR804BA33
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 149 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 1513 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: POWERFET3X3
PR804BA33 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PR804BA33 Specs
pr804ba33.pdf
PR804BA33 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.4m @VGS = 10V 30V 149A ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TC = 25 C 149 TC = 100 C 94 ID Continuous Drain Current4 TA = 25 C 37 A TA= 70 C ... See More ⇒
Detailed specifications: CI60N120SM , CI72N65 , CIM3N150 , CIM6N120-220C , CIM6N120-220F , CIM6N120-247 , P7515BDB , PM5G8EA , 2SK3568 , QM0005D , QN4103M6N , ISCNH310P , ISCNH320K , ISCNH325W , ISCNH327P , ISCNH328W , ISCNH339D .
History: STD140N6F7 | JMSH1552PU
Keywords - PR804BA33 MOSFET specs
PR804BA33 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: STD140N6F7 | JMSH1552PU
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