WFD7N65L Specs and Replacement
Type Designator: WFD7N65L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 126 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.38 Ohm
Package: TO252
WFD7N65L substitution
WFD7N65L datasheet
wfd7n65l.pdf
WFD7N65L Product Description Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features D 7A,650V,R (Max1.38 )@V =10V DS(on) GS Low Crss (typical 15pF ) Fast Switching Capability G 100%Avalanche Tested Isolation Voltage (V =4000V AC) ISO Maximum Junction Temperature Range(150 ) S General Description ... See More ⇒
Detailed specifications: WMO26N65C4 , WMJ26N65C4 , WML28N60C4 , WMK28N60C4 , WMN28N60C4 , WMM28N60C4 , WMJ28N60C4 , WFD2N65L , IRLZ44N , WFF2N65L , WFF5N65L , WFF8N65L , WFJ5N65B , WFU2N65L , WTM2300 , WTM2301 , WTM2302 .
History: FDC3612
Keywords - WFD7N65L MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: FDC3612
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