WFD7N65L Datasheet. Specs and Replacement
Type Designator: WFD7N65L 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 126 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.38 Ohm
Package: TO252
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WFD7N65L substitution
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WFD7N65L datasheet
wfd7n65l.pdf
WFD7N65L Product Description Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features D 7A,650V,R (Max1.38 )@V =10V DS(on) GS Low Crss (typical 15pF ) Fast Switching Capability G 100%Avalanche Tested Isolation Voltage (V =4000V AC) ISO Maximum Junction Temperature Range(150 ) S General Description ... See More ⇒
Detailed specifications: WMO26N65C4, WMJ26N65C4, WML28N60C4, WMK28N60C4, WMN28N60C4, WMM28N60C4, WMJ28N60C4, WFD2N65L, IRLZ44N, WFF2N65L, WFF5N65L, WFF8N65L, WFJ5N65B, WFU2N65L, WTM2300, WTM2301, WTM2302
Keywords - WFD7N65L MOSFET specs
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History: PTP20N40B | IPSA70R360P7S | FQB8N60C | 2N7297 | HM80N03KA | CJ3401 | IXFH67N10
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