TW3134KDW Datasheet and Replacement
Type Designator: TW3134KDW
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 9 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: SOT363
TW3134KDW substitution
TW3134KDW Datasheet (PDF)
tw3134kdw.pdf
TW3134KDW SOT363-6LSOT363 Unit:mm Epoxy Meets UL 94 V-0 Flammability Rating High Density Cell Design For Low RDS(ON) Equivalent Circuit Voltage Controlled Small Signal Switch Rugged And Reliable ESD Protected Device Marking CodeCJ3134KDW 34KMaximum Ratings Ta = 25 Symbol Parameter Value Units VDS Drain-Source Voltage 20 V VGS Gate-Source-Volt
Datasheet: TW0115SR-Y , TW1504ESG , TW1515ASI , TW1525SI , TW1527SI , TW1529SJ , TW1754SI-X , TW2203FL-Y , 2N7000 , TW4614SQ-X , TW7404FJ , TW7407FL-Y , TW7408FN , TW7468FL , TWE3139K , TWS1008SQ , TWS6428FJ .
History: IRFH7190
Keywords - TW3134KDW MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRFH7190
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