All MOSFET. TW3134KDW Datasheet

 

TW3134KDW MOSFET. Datasheet pdf. Equivalent


   Type Designator: TW3134KDW
   Marking Code: 34K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 0.75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: SOT363

 TW3134KDW Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TW3134KDW Datasheet (PDF)

 ..1. Size:1669K  cn twgmc
 tw3134kdw.pdf

TW3134KDW TW3134KDW

TW3134KDW SOT363-6LSOT363 Unit:mm Epoxy Meets UL 94 V-0 Flammability Rating High Density Cell Design For Low RDS(ON) Equivalent Circuit Voltage Controlled Small Signal Switch Rugged And Reliable ESD Protected Device Marking CodeCJ3134KDW 34KMaximum Ratings Ta = 25 Symbol Parameter Value Units VDS Drain-Source Voltage 20 V VGS Gate-Source-Volt

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MTNK3Y3

 

 
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