TW3134KDW Datasheet and Replacement
Type Designator: TW3134KDW
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 9 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: SOT363
TW3134KDW substitution
TW3134KDW Datasheet (PDF)
tw3134kdw.pdf
TW3134KDW SOT363-6LSOT363 Unit:mm Epoxy Meets UL 94 V-0 Flammability Rating High Density Cell Design For Low RDS(ON) Equivalent Circuit Voltage Controlled Small Signal Switch Rugged And Reliable ESD Protected Device Marking CodeCJ3134KDW 34KMaximum Ratings Ta = 25 Symbol Parameter Value Units VDS Drain-Source Voltage 20 V VGS Gate-Source-Volt
Datasheet: TW0115SR-Y , TW1504ESG , TW1515ASI , TW1525SI , TW1527SI , TW1529SJ , TW1754SI-X , TW2203FL-Y , IRFP250N , TW4614SQ-X , TW7404FJ , TW7407FL-Y , TW7408FN , TW7468FL , TWE3139K , TWS1008SQ , TWS6428FJ .
History: PHT4NQ10T | 2SK2610 | TWE3139K
Keywords - TW3134KDW MOSFET datasheet
TW3134KDW cross reference
TW3134KDW equivalent finder
TW3134KDW lookup
TW3134KDW substitution
TW3134KDW replacement
History: PHT4NQ10T | 2SK2610 | TWE3139K
LIST
Last Update
MOSFET: APG60N10S | APG120N04NF | AP8G06S | AP6P04S | AP6G03S | AP65N06DF | AP65N06D | AP4957A | AP15H06S | AP10G04S | AP90N08NF | AP8P06S | AP4G02LI | AP4606B | AP3P06MI | AP2302AI
MDT7N65 | MDT70N03 | MDT60NF06D | MDT60N10D | MDT60N06D | MDT5N65 | MPG100N08P | MPG100N07S | MPG100N07P | MPG100N06S | MPG100N06P | MPF9N20 | MPF8N65 | MPF5N65 | MPF50N25 | MPF40N25 | MPF3N150 | MPF2N60 | MDT50N06D | MDT40N10D | MDT40N06D | MDT30N10D | MDT30N10 | MDT30N06L | MDT2N60 | MDT20P04D
Popular searches
bc639 equivalent | bd138 transistor equivalent | c1096 transistor | c1345 transistor | jcs640c | kn2907a | ncep028n85 datasheet | sw50n06