All MOSFET. TWS1008SQ Datasheet

 

TWS1008SQ Datasheet and Replacement


   Type Designator: TWS1008SQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 832 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: SOP8
 

 TWS1008SQ substitution

   - MOSFET ⓘ Cross-Reference Search

 

TWS1008SQ Datasheet (PDF)

 ..1. Size:1220K  cn twgmc
 tws1008sq.pdf pdf_icon

TWS1008SQ

TWS1008SQN-Channel Enhancement Mode Power MOSFET Features General Description VDS = 100V, load switch ID = 10.5A Power Management RDS(ON) @VGS= 10V, TYP 9.7m DC-DC Converter RDS(ON) @VGS= 6V, TYP 11 m RDS(ON) @VGS= 4.5V, TYP 13.5m Pin Configurations SOP8 Absolute Maximum Ratings @T =25 unless otherwise noted AParameter Symbol Ra

Datasheet: TW2203FL-Y , TW3134KDW , TW4614SQ-X , TW7404FJ , TW7407FL-Y , TW7408FN , TW7468FL , TWE3139K , IRLZ44N , TWS6428FJ , TWS6602FJ , TWS6604FL , SL100N08 , SL10N65F , SL11N65CK , SL11N65C , SL11N65CF .

History: TK20H50C

Keywords - TWS1008SQ MOSFET datasheet

 TWS1008SQ cross reference
 TWS1008SQ equivalent finder
 TWS1008SQ lookup
 TWS1008SQ substitution
 TWS1008SQ replacement

 

 
Back to Top

 


 
.