TWS1008SQ Specs and Replacement
Type Designator: TWS1008SQ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 832 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
Package: SOP8
TWS1008SQ substitution
TWS1008SQ Specs
tws1008sq.pdf
TWS1008SQ N-Channel Enhancement Mode Power MOSFET Features General Description VDS = 100V, load switch ID = 10.5A Power Management RDS(ON) @VGS= 10V, TYP 9.7m DC-DC Converter RDS(ON) @VGS= 6V, TYP 11 m RDS(ON) @VGS= 4.5V, TYP 13.5m Pin Configurations SOP8 Absolute Maximum Ratings @T =25 unless otherwise noted A Parameter Symbol Ra... See More ⇒
Detailed specifications: TW2203FL-Y , TW3134KDW , TW4614SQ-X , TW7404FJ , TW7407FL-Y , TW7408FN , TW7468FL , TWE3139K , AON7408 , TWS6428FJ , TWS6602FJ , TWS6604FL , SL100N08 , SL10N65F , SL11N65CK , SL11N65C , SL11N65CF .
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