TWS1008SQ Datasheet. Specs and Replacement

Type Designator: TWS1008SQ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 832 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: SOP8

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TWS1008SQ datasheet

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TWS1008SQ

TWS1008SQ N-Channel Enhancement Mode Power MOSFET Features General Description VDS = 100V, load switch ID = 10.5A Power Management RDS(ON) @VGS= 10V, TYP 9.7m DC-DC Converter RDS(ON) @VGS= 6V, TYP 11 m RDS(ON) @VGS= 4.5V, TYP 13.5m Pin Configurations SOP8 Absolute Maximum Ratings @T =25 unless otherwise noted A Parameter Symbol Ra... See More ⇒

Detailed specifications: TW2203FL-Y, TW3134KDW, TW4614SQ-X, TW7404FJ, TW7407FL-Y, TW7408FN, TW7468FL, TWE3139K, 2N7000, TWS6428FJ, TWS6602FJ, TWS6604FL, SL100N08, SL10N65F, SL11N65CK, SL11N65C, SL11N65CF

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