All MOSFET. TWS1008SQ Datasheet


TWS1008SQ MOSFET. Datasheet pdf. Equivalent

Type Designator: TWS1008SQ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 10.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 33 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 832 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0125 Ohm

Package: SOP8

TWS1008SQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search


TWS1008SQ Datasheet (PDF)

..1. tws1008sq.pdf Size:1220K _cn_twgmc


TWS1008SQN-Channel Enhancement Mode Power MOSFET Features General Description VDS = 100V, load switch ID = 10.5A Power Management RDS(ON) @VGS= 10V, TYP 9.7m DC-DC Converter RDS(ON) @VGS= 6V, TYP 11 m RDS(ON) @VGS= 4.5V, TYP 13.5m Pin Configurations SOP8 Absolute Maximum Ratings @T =25 unless otherwise noted AParameter Symbol Ra

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , 10N60 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .


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