SL4N65I MOSFET. Datasheet pdf. Equivalent
Type Designator: SL4N65I
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 157.1 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 18 nC
Rise Time (tr): 26 nS
Drain-Source Capacitance (Cd): 60 pF
Maximum Drain-Source On-State Resistance (Rds): 2.6 Ohm
Package: IPAK
SL4N65I Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL4N65I Datasheet (PDF)
sl4n65.pdf
SL4N65N-CHANNEL MOSFET MAIN CHARACTERISTICS4AID650VVDSS2.6R V =10VDS(ON) GS18nCQGAPPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power suppliesFEATURES 1 Gate Low
Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF630 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .
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