SL4N65I Datasheet. Specs and Replacement
Type Designator: SL4N65I 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 157.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: IPAK
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SL4N65I datasheet
sl4n65f sl4n65i sl4n65d.pdf
SL4N65 N-CHANNEL MOSFET MAIN CHARACTERISTICS 4A I D 650V V DSS 2.6 R V =10V DS(ON) GS 18nC Q G APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power supplies FEATURES 1 Gate Low ... See More ⇒
sl4n65.pdf
SL4N65 N-CHANNEL MOSFET MAIN CHARACTERISTICS 4A I D 650V V DSS 2.6 R V =10V DS(ON) GS 18nC Q G APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power supplies FEATURES 1 Gate Low ... See More ⇒
Detailed specifications: SL3409, SL3415, SL3422, SL3N06, SL420NPD, SL42N120A, SL48N08Q, SL4N65F, IRFZ46N, SL4N65D, SL60N06, SL60N10Q, SL65N10Q, SL75N06Q, SL7N65F, SL7N65C, SL80N10
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