SL4N65D Datasheet and Replacement
Type Designator: SL4N65D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 144.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 18 nC
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: DPAK
SL4N65D substitution
SL4N65D Datasheet (PDF)
sl4n65f sl4n65i sl4n65d.pdf
SL4N65N-CHANNEL MOSFET MAIN CHARACTERISTICS4AID650VVDSS2.6R V =10VDS(ON) GS18nCQGAPPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power suppliesFEATURES 1 Gate Low
sl4n65.pdf
SL4N65N-CHANNEL MOSFET MAIN CHARACTERISTICS4AID650VVDSS2.6R V =10VDS(ON) GS18nCQGAPPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power suppliesFEATURES 1 Gate Low
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