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SL80N10 Spec and Replacement


   Type Designator: SL80N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 605 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220

 SL80N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SL80N10 Specs

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SL80N10

SL80N10 N-Channel Power MOSFET General Features VDS =100V,ID =80A RDS(ON) ... See More ⇒

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SL80N10

SL80N03 N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 80A D R ( at V = 10V) 6.5mohm DS(ON) GS R ( at V = 5V) 10mohm DS(ON) GS Features High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissi... See More ⇒

Detailed specifications: SL4N65I , SL4N65D , SL60N06 , SL60N10Q , SL65N10Q , SL75N06Q , SL7N65F , SL7N65C , IRF9640 , SL8205S , 2N06L07B , 2N06L07P , 2N06L09B , 2N06L09P , 2N06L11B , 2N06L11K , 2N06L11P .

History: AP4453GYT

Keywords - SL80N10 MOSFET specs

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