SL80N10 MOSFET Datasheet: N-Ch, 100V, 80A. Full specification with pinout and replacement list

SL80N10 Specs and Replacement

Type Designator: SL80N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 188 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V

Qg ⓘ - Total Gate Charge: 45 nC
tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 605 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO220

SL80N10 substitution

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SL80N10 datasheet

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SL80N10 N-Channel Power MOSFET General Features VDS =100V,ID =80A RDS(ON) ... See More ⇒

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SL80N03 N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 80A D R ( at V = 10V) 6.5mohm DS(ON) GS R ( at V = 5V) 10mohm DS(ON) GS Features High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissi... See More ⇒

Detailed specifications: SL4N65I , SL4N65D , SL60N06 , SL60N10Q , SL65N10Q , SL75N06Q , SL7N65F , SL7N65C , IRF9640 , SL8205S , 2N06L07B , 2N06L07P , 2N06L09B , 2N06L09P , 2N06L11B , 2N06L11K , 2N06L11P .