All MOSFET. SL80N10 Datasheet

 

SL80N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: SL80N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 188 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.3 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 45 nC

Rise Time (tr): 6.5 nS

Drain-Source Capacitance (Cd): 605 pF

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: TO220

SL80N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SL80N10 Datasheet (PDF)

..1. sl80n10.pdf Size:1443K _slkor

SL80N10
SL80N10

SL80N10N-Channel Power MOSFET General Features VDS =100V,ID =80ARDS(ON)

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , 10N60 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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