SL80N10 Datasheet. Specs and Replacement

Type Designator: SL80N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 188 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 605 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO220

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SL80N10 datasheet

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SL80N10

SL80N10 N-Channel Power MOSFET General Features VDS =100V,ID =80A RDS(ON) ... See More ⇒

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SL80N10

SL80N03 N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 80A D R ( at V = 10V) 6.5mohm DS(ON) GS R ( at V = 5V) 10mohm DS(ON) GS Features High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissi... See More ⇒

Detailed specifications: SL4N65I, SL4N65D, SL60N06, SL60N10Q, SL65N10Q, SL75N06Q, SL7N65F, SL7N65C, 8N60, SL8205S, 2N06L07B, 2N06L07P, 2N06L09B, 2N06L09P, 2N06L11B, 2N06L11K, 2N06L11P

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