All MOSFET. SL80N10 Datasheet

 

SL80N10 Datasheet and Replacement


   Type Designator: SL80N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 605 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220
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SL80N10 Datasheet (PDF)

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SL80N10

SL80N10N-Channel Power MOSFET General Features VDS =100V,ID =80ARDS(ON)

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SL80N10

SL80N03N-Channel Enhancement Mode Field Effect TransistorProduct Summary V 30V DSI 80A DR ( at V = 10V) 6.5mohm DS(ON) GSR ( at V = 5V) 10mohm DS(ON) GSFeatures High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissi

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History: VBNC1303 | IRFS4010PBF

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