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BUZ81 Specs and Replacement


   Type Designator: BUZ81
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO220AB
 

 BUZ81 substitution

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BUZ81 Specs

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BUZ81

BUZ 81 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 81 800 V 4 A 2.5 TO-220 AB C67078-S1345-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 48 C 4 Pulsed drain current IDpuls TC = 25 C 16 Avalanche current,limited by Tjmax IAR 4 A... See More ⇒

Detailed specifications: IRF221 , FCA22N60N , IRF222 , FCA35N60 , IRF223 , FCA36N60NF , IRF3705 , FCA47N60 , 20N60 , FCA47N60F109 , FQP10N60C , FQPF10N60C , FCA47N60F , FCA76N60N , 2SJ245 , FCB11N60 , 2SK3653 .

Keywords - BUZ81 MOSFET specs

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