BUZ81 Datasheet. Specs and Replacement

Type Designator: BUZ81  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO220AB

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BUZ81 datasheet

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BUZ81

BUZ 81 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 81 800 V 4 A 2.5 TO-220 AB C67078-S1345-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 48 C 4 Pulsed drain current IDpuls TC = 25 C 16 Avalanche current,limited by Tjmax IAR 4 A... See More ⇒

Detailed specifications: IRF221, FCA22N60N, IRF222, FCA35N60, IRF223, FCA36N60NF, IRF3705, FCA47N60, 20N60, FCA47N60F109, FQP10N60C, FQPF10N60C, FCA47N60F, FCA76N60N, 2SJ245, FCB11N60, 2SK3653

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