All MOSFET. BUZ81 Datasheet

 

BUZ81 MOSFET. Datasheet pdf. Equivalent

Type Designator: BUZ81

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: TO220AB

BUZ81 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUZ81 Datasheet (PDF)

1.1. buz81.pdf Size:176K _siemens

BUZ81
BUZ81

BUZ 81 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 81 800 V 4 A 2.5 Ω TO-220 AB C67078-S1345-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 48 °C 4 Pulsed drain current IDpuls TC = 25 °C 16 Avalanche current,limited by Tjmax IAR 4 A

Datasheet: IRF221 , FCA22N60N , IRF222 , FCA35N60 , IRF223 , FCA36N60NF , IRF3705 , FCA47N60 , IRF840 , FCA47N60_F109 , FQP10N60C , FQPF10N60C , FCA47N60F , FCA76N60N , 2SJ245 , FCB11N60 , 2SK3653 .

 
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