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VB7101M Spec and Replacement


   Type Designator: VB7101M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095(typ) Ohm
   Package: TSOP6

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VB7101M Specs

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VB7101M

VB7101M www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.095 at VGS = 10 V 3.2 Low On-Resistance 100 4.2 nC 0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS ... See More ⇒

Detailed specifications: VB1240B , VB1240X , VB1330X , VB162KX , VB2140 , VB2290A , VB2658 , VB562K , 8205A , VB7322 , VB7638 , VB8658 , VB9220 , VBA1101N , VBA1203M , VBA1210 , VBA1302 .

History: AP01L60H-H | RJK1001DPP-E0 | IPP111N15N3G | IPP111N15N3 | HM85P02 | SQM85N10-10 | MTD6P10ET4

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