All MOSFET. VB7101M Datasheet

 

VB7101M Datasheet and Replacement


   Type Designator: VB7101M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095(typ) Ohm
   Package: TSOP6
 

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VB7101M Datasheet (PDF)

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VB7101M

VB7101Mwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS

Datasheet: VB1240B , VB1240X , VB1330X , VB162KX , VB2140 , VB2290A , VB2658 , VB562K , 2SK3878 , VB7322 , VB7638 , VB8658 , VB9220 , VBA1101N , VBA1203M , VBA1210 , VBA1302 .

History: INK011BAP1 | SMN01L20Q | STB60NF06LT4 | STG8820 | CS3410BR | FQU4N50TUWS | SSP80R240SFD

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