All MOSFET. VBA5415 Datasheet

 

VBA5415 Datasheet and Replacement


   Type Designator: VBA5415
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 745 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015(typ) Ohm
   Package: SO8
 

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VBA5415 Datasheet (PDF)

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VBA5415

VBA5415www.VBsemi.comN- and P-Channel 40V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionTyp. ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.015 at VGS = 10 V 9.0 100 % Rg and UIS TestedN-Channel 40 13.3 Compliant to RoHS Directive 2002/95/EC0.018 at VGS = 4.5 V 7.6APPLICATIONS0.017 at VGS =

Datasheet: VBA4216 , VBA4311 , VBA4317 , VBA4338 , VBA4658 , VBA4670 , VBA5102M , VBA5325 , 2SK3568 , TSA100N20M , TSA18N50MR , TSA20N60MR , TSA20N65MR , TSA23N50M , TSA24N50M , TSA28N50M , TSA3878 .

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