TTX2312A Datasheet. Specs and Replacement

Type Designator: TTX2312A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.2 nS

Cossⓘ - Output Capacitance: 119 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOT23

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TTX2312A datasheet

 ..1. Size:542K  cn wuxi unigroup
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TTX2312A

TTX2312A Wuxi Unigroup Microelectronics CO.,LTD. 20V N-Channel Trench MOSFET Features Product Summary Trench Power Technology VDS 20V Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:712K  cn wuxi unigroup
 ttx2305a.pdf pdf_icon

TTX2312A

TTX2305A Wuxi Unigroup Microelectronics CO.,LTD. 20V P-Channel Trench MOSFET(Preliminary) Product Summary General Description VDS -20V Trench Power technology ID (at VGS =-10V) -4.5A Low RDS(ON) RDS(ON) (at VGS =-10V) ... See More ⇒

 9.2. Size:697K  cn wuxi unigroup
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TTX2312A

TTX2302A Wuxi Unigroup Microelectronics CO.,LTD. 20V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 20V Low RDS(ON) ID (at VGS =10V) 3.7A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒

 9.3. Size:728K  cn wuxi unigroup
 ttx2301a.pdf pdf_icon

TTX2312A

TTX2301A Wuxi Unigroup Microelectronics CO.,LTD. 20V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -20V Low RDS(ON) ID (at VGS =-4.5V) -2.6A Low Gate Charge RDS(ON) (at VGS =-10V) ... See More ⇒

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Detailed specifications: TTK8205, TTK8205A, TTP115N68A, TTP88N08A, TTX2301A, TTX2302, TTX2302A, TTX2305A, IRL3713, TTX2N7002KA, TTX3401A, VBB1630, VBC6N2014, VBC6N2022, VBC6N3010, VBC6P3033, VBC7P2216

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