All MOSFET. VBB1630 Datasheet

 

VBB1630 Datasheet and Replacement


   Type Designator: VBB1630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.09 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.030(typ) Ohm
   Package: SOT23
 

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VBB1630 Datasheet (PDF)

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VBB1630

VBB1630www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.030 at VGS = 10 V 5.560 2.3 nC 100 % Rg Tested0.033 at VGS = 4.5 V 4.5 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1

Datasheet: TTP88N08A , TTX2301A , TTX2302 , TTX2302A , TTX2305A , TTX2312A , TTX2N7002KA , TTX3401A , STP65NF06 , VBC6N2014 , VBC6N2022 , VBC6N3010 , VBC6P3033 , VBC7P2216 , VBC8338 , VBE1101M , VBE1101N .

History: SPU07N60C3 | F5020-S

Keywords - VBB1630 MOSFET datasheet

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