VBB1630 MOSFET. Datasheet pdf. Equivalent
Type Designator: VBB1630
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.09 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 3.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.5 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 26 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.030(typ) Ohm
Package: SOT23
VBB1630 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBB1630 Datasheet (PDF)
vbb1630.pdf
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VBB1630www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.030 at VGS = 10 V 5.560 2.3 nC 100 % Rg Tested0.033 at VGS = 4.5 V 4.5 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .