VBB1630 Datasheet. Specs and Replacement

Type Designator: VBB1630  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.09 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.030 typ Ohm

Package: SOT23

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VBB1630 datasheet

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VBB1630

VBB1630 www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.030 at VGS = 10 V 5.5 60 2.3 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 4.5 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23) G 1... See More ⇒

Detailed specifications: TTP88N08A, TTX2301A, TTX2302, TTX2302A, TTX2305A, TTX2312A, TTX2N7002KA, TTX3401A, AO4468, VBC6N2014, VBC6N2022, VBC6N3010, VBC6P3033, VBC7P2216, VBC8338, VBE1101M, VBE1101N

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.