VBB1630 Datasheet. Specs and Replacement
Type Designator: VBB1630 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.09 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 26 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.030 typ Ohm
Package: SOT23
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VBB1630 datasheet
vbb1630.pdf
VBB1630 www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.030 at VGS = 10 V 5.5 60 2.3 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 4.5 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23) G 1... See More ⇒
Detailed specifications: TTP88N08A, TTX2301A, TTX2302, TTX2302A, TTX2305A, TTX2312A, TTX2N7002KA, TTX3401A, AO4468, VBC6N2014, VBC6N2022, VBC6N3010, VBC6P3033, VBC7P2216, VBC8338, VBE1101M, VBE1101N
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
MOSFET Parameters. How They Affect Each Other
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