VBB1630 Spec and Replacement
Type Designator: VBB1630
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.09 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 26 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.030(typ) Ohm
Package: SOT23
VBB1630 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBB1630 Specs
vbb1630.pdf
VBB1630 www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.030 at VGS = 10 V 5.5 60 2.3 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 4.5 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23) G 1... See More ⇒
Detailed specifications: TTP88N08A , TTX2301A , TTX2302 , TTX2302A , TTX2305A , TTX2312A , TTX2N7002KA , TTX3401A , IRFZ46N , VBC6N2014 , VBC6N2022 , VBC6N3010 , VBC6P3033 , VBC7P2216 , VBC8338 , VBE1101M , VBE1101N .
History: AP18T20GH | ME7632S | TPC6010-H | TPC8118 | 3N176 | CEM9435 | IRFF210
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