VBC6P3033 Specs and Replacement
Type Designator: VBC6P3033
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036(typ) Ohm
Package: TSSOP8
VBC6P3033 substitution
VBC6P3033 Specs
vbc6p3033.pdf
VBC6P3033 www.VBsemi.com Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 0.036 at VGS = - 10 V - 5.2 - 30 RoHS 0.055 at VGS = - 4.5 V - 4.2 COMPLIANT APPLICATIONS Load Switch Battery Switch S1 S2 TSSOP-8 G1 G2 D1 1 D2 8 S1 2 S2 7 S1 3 S2 6 G1 4 G2 5 Top View D1 D2 ... See More ⇒
Detailed specifications: TTX2305A , TTX2312A , TTX2N7002KA , TTX3401A , VBB1630 , VBC6N2014 , VBC6N2022 , VBC6N3010 , IRFB7545 , VBC7P2216 , VBC8338 , VBE1101M , VBE1101N , VBE1102N , VBE1104N , VBE1105 , VBE1106N .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
