VBC6P3033 MOSFET. Datasheet pdf. Equivalent
Type Designator: VBC6P3033
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 4.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 14 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036(typ) Ohm
Package: TSSOP8
VBC6P3033 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBC6P3033 Datasheet (PDF)
..1. Size:361K cn vbsemi
vbc6p3033.pdf
vbc6p3033.pdf
VBC6P3033www.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs 0.036 at VGS = - 10 V - 5.2- 30RoHS0.055 at VGS = - 4.5 V - 4.2COMPLIANTAPPLICATIONS Load Switch Battery SwitchS1 S2TSSOP-8G1 G2D1 1 D28S1 2 S27S1 3 S26G1 4 G25Top ViewD1 D2
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
