VBC6P3033 Datasheet. Specs and Replacement

Type Designator: VBC6P3033  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 typ Ohm

Package: TSSOP8

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VBC6P3033 datasheet

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VBC6P3033

VBC6P3033 www.VBsemi.com Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 0.036 at VGS = - 10 V - 5.2 - 30 RoHS 0.055 at VGS = - 4.5 V - 4.2 COMPLIANT APPLICATIONS Load Switch Battery Switch S1 S2 TSSOP-8 G1 G2 D1 1 D2 8 S1 2 S2 7 S1 3 S2 6 G1 4 G2 5 Top View D1 D2 ... See More ⇒

Detailed specifications: TTX2305A, TTX2312A, TTX2N7002KA, TTX3401A, VBB1630, VBC6N2014, VBC6N2022, VBC6N3010, 8N65, VBC7P2216, VBC8338, VBE1101M, VBE1101N, VBE1102N, VBE1104N, VBE1105, VBE1106N

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.