VBC7P2216 Datasheet. Specs and Replacement

Type Designator: VBC7P2216  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.05 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.010 typ Ohm

Package: TSSOP8

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VBC7P2216 datasheet

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VBC7P2216

VBC7P2216 www.VBsemi.com P-Channel 20-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.012 at VGS = - 4.5 V Available - 9.0 RoHS* 0.015 at VGS = - 2.5 V -20 - 7.8 COMPLIANT 0.020 at VGS = - 1.8 V - 6.0 S* TSSOP-8 G D D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common. 2 7 S S 3 6... See More ⇒

Detailed specifications: TTX2312A, TTX2N7002KA, TTX3401A, VBB1630, VBC6N2014, VBC6N2022, VBC6N3010, VBC6P3033, IRF520, VBC8338, VBE1101M, VBE1101N, VBE1102N, VBE1104N, VBE1105, VBE1106N, VBE1158N

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs