VBC7P2216 Specs and Replacement
Type Designator: VBC7P2216
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.05 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 85 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.010(typ) Ohm
Package: TSSOP8
VBC7P2216 substitution
VBC7P2216 Specs
vbc7p2216.pdf
VBC7P2216 www.VBsemi.com P-Channel 20-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.012 at VGS = - 4.5 V Available - 9.0 RoHS* 0.015 at VGS = - 2.5 V -20 - 7.8 COMPLIANT 0.020 at VGS = - 1.8 V - 6.0 S* TSSOP-8 G D D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common. 2 7 S S 3 6... See More ⇒
Detailed specifications: TTX2312A , TTX2N7002KA , TTX3401A , VBB1630 , VBC6N2014 , VBC6N2022 , VBC6N3010 , VBC6P3033 , AON7403 , VBC8338 , VBE1101M , VBE1101N , VBE1102N , VBE1104N , VBE1105 , VBE1106N , VBE1158N .
History: VBC6N3010
Keywords - VBC7P2216 MOSFET specs
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