All MOSFET. VBC7P2216 Datasheet

 

VBC7P2216 Datasheet and Replacement


   Type Designator: VBC7P2216
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.05 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 85 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.010(typ) Ohm
   Package: TSSOP8
 

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VBC7P2216 Datasheet (PDF)

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VBC7P2216

VBC7P2216www.VBsemi.comP-Channel 20-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.012 at VGS = - 4.5 V Available- 9.0RoHS*0.015 at VGS = - 2.5 V -20 - 7.8COMPLIANT0.020 at VGS = - 1.8 V - 6.0S*TSSOP-8 GD D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common.2 7 S S 3 6

Datasheet: TTX2312A , TTX2N7002KA , TTX3401A , VBB1630 , VBC6N2014 , VBC6N2022 , VBC6N3010 , VBC6P3033 , EMB04N03H , VBC8338 , VBE1101M , VBE1101N , VBE1102N , VBE1104N , VBE1105 , VBE1106N , VBE1158N .

History: LSC65R280HT

Keywords - VBC7P2216 MOSFET datasheet

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