VBC8338 Datasheet. Specs and Replacement

Type Designator: VBC8338  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 typ Ohm

Package: TSSOP8

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VBC8338 datasheet

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VBC8338

VBC8338 www.VBsemi.com N- and P-Channel 60-V (D-S) MOSFET Simple Drive Requirement N-CH BVDSS 30V Lower Gate Charge RDS(ON) 22m Fast Switching Performance ID 6.2A RoHS Compliant & Halogen-Free P-CH BVDSS -30V RDS(ON) 45m ID -5.0A D1 D2 G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VG... See More ⇒

Detailed specifications: TTX2N7002KA, TTX3401A, VBB1630, VBC6N2014, VBC6N2022, VBC6N3010, VBC6P3033, VBC7P2216, SI2302, VBE1101M, VBE1101N, VBE1102N, VBE1104N, VBE1105, VBE1106N, VBE1158N, VBE1201K

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