VBC8338 Specs and Replacement
Type Designator: VBC8338
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 1.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023(typ) Ohm
Package: TSSOP8
VBC8338 substitution
VBC8338 Specs
vbc8338.pdf
VBC8338 www.VBsemi.com N- and P-Channel 60-V (D-S) MOSFET Simple Drive Requirement N-CH BVDSS 30V Lower Gate Charge RDS(ON) 22m Fast Switching Performance ID 6.2A RoHS Compliant & Halogen-Free P-CH BVDSS -30V RDS(ON) 45m ID -5.0A D1 D2 G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VG... See More ⇒
Detailed specifications: TTX2N7002KA , TTX3401A , VBB1630 , VBC6N2014 , VBC6N2022 , VBC6N3010 , VBC6P3033 , VBC7P2216 , K2611 , VBE1101M , VBE1101N , VBE1102N , VBE1104N , VBE1105 , VBE1106N , VBE1158N , VBE1201K .
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