VBC8338 MOSFET. Datasheet pdf. Equivalent
Type Designator: VBC8338
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 6.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 105 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023(typ) Ohm
Package: TSSOP8
VBC8338 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBC8338 Datasheet (PDF)
..1. Size:876K cn vbsemi
vbc8338.pdf
vbc8338.pdf
VBC8338www.VBsemi.comN- and P-Channel 60-V (D-S) MOSFET Simple Drive Requirement N-CH BVDSS 30V Lower Gate Charge RDS(ON) 22m Fast Switching Performance ID 6.2A RoHS Compliant & Halogen-Free P-CH BVDSS -30VRDS(ON) 45mID -5.0AD1 D2G2G1S1 S2Absolute Maximum RatingsSymbol Parameter Rating Units N-channel P-channelVDS Drain-Source Voltage 30 -30 VVG
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
