All MOSFET. VBC8338 Datasheet

 

VBC8338 Datasheet and Replacement


   Type Designator: VBC8338
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023(typ) Ohm
   Package: TSSOP8
 

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VBC8338 Datasheet (PDF)

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VBC8338

VBC8338www.VBsemi.comN- and P-Channel 60-V (D-S) MOSFET Simple Drive Requirement N-CH BVDSS 30V Lower Gate Charge RDS(ON) 22m Fast Switching Performance ID 6.2A RoHS Compliant & Halogen-Free P-CH BVDSS -30VRDS(ON) 45mID -5.0AD1 D2G2G1S1 S2Absolute Maximum RatingsSymbol Parameter Rating Units N-channel P-channelVDS Drain-Source Voltage 30 -30 VVG

Datasheet: TTX2N7002KA , TTX3401A , VBB1630 , VBC6N2014 , VBC6N2022 , VBC6N3010 , VBC6P3033 , VBC7P2216 , IRF9640 , VBE1101M , VBE1101N , VBE1102N , VBE1104N , VBE1105 , VBE1106N , VBE1158N , VBE1201K .

History: RZL025P01TR | SI4682DY | MTN7N60FP | CEP6601 | SE80100GA | RTR025N05TL | HTM058N03P

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