VBE1806 MOSFET. Datasheet pdf. Equivalent
Type Designator: VBE1806
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 35.5 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 950 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0050(typ) Ohm
Package: TO252
VBE1806 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBE1806 Datasheet (PDF)
..1. Size:1143K cn vbsemi
vbe1806.pdf
vbe1806.pdf
VBE1806www.VBsemi.comN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0055 at VGS = 10 V 75a80 0.0088 at VGS = 6.0 V 65a 17.1 nCAPPLICATIONS0.0115 at VGS = 5.0 V 54 Primary Side Switching Synchronous RectificationTO-252D DC/AC Inverters LED Backlighti
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