VBE2102M PDF and Equivalents Search

 

VBE2102M PDF Specs and Replacement


   Type Designator: VBE2102M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 32.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.279 Ohm
   Package: TO251
 

 VBE2102M substitution

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VBE2102M PDF Specs

 ..1. Size:575K  cn vbsemi
 vbe2102m vbfb2102m.pdf pdf_icon

VBE2102M

VBE2102M/VBFB2102M www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET - 100 11.7 0.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 P... See More ⇒

 8.1. Size:652K  cn vbsemi
 vbe2104n.pdf pdf_icon

VBE2102M

VBE2104N www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 100 Definition RDS(on) ( ) at VGS = - 10 V 0.033 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.036 Package with Low Thermal Resistance ID (A) - 40 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directiv... See More ⇒

Detailed specifications: VBE1410 , VBE1606 , VBE1615 , VBE1638 , VBE165R02 , VBE165R04 , VBE1695 , VBE1806 , AO3400 , VBFB2102M , VBE2104N , VBE2305 , VBE2309 , VBE2311 , VBE2317 , VBE2338 , VBE2412 .

History: SVF4N60CAF | 2N3994

Keywords - VBE2102M MOSFET specs

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