VBE2309 Datasheet. Specs and Replacement

Type Designator: VBE2309  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 187 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 225 nS

Cossⓘ - Output Capacitance: 1565 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO252

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VBE2309 datasheet

 ..1. Size:421K  cn vbsemi
vbe2309.pdf pdf_icon

VBE2309

VBE2309 www.VBsemi.com P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A)a Available 0.009 at VGS = - 10 V 80 RoHS* - 30 COMPLIANT 0.012 at VGS = - 4.5 V 80 S TO-252 G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit G... See More ⇒

 8.1. Size:565K  cn vbsemi
vbe2305.pdf pdf_icon

VBE2309

VBE2305 www.VBsemi.com P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A)a Available 0.005 at VGS = - 10 V -100 RoHS* - 30 COMPLIANT 0.007 at VGS = - 4.5 V -90 S TO-252 G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit Gate... See More ⇒

 9.1. Size:575K  cn vbsemi
vbe2338.pdf pdf_icon

VBE2309

VBE2338 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.033 at VGS = - 10 V - 26 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.046 at VGS = - 4.5 V - 21 APPLICATIONS Load Switch Notebook Adaptor Switch S TO-252 G G D S D Top View P-Ch... See More ⇒

 9.2. Size:461K  cn vbsemi
vbe2317.pdf pdf_icon

VBE2309

VBE2317 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 35 APPLICATIONS Load Switch Battery Switch S TO-252 G D G D S P-Channel MOSFET AB... See More ⇒

Detailed specifications: VBE165R02, VBE165R04, VBE1695, VBE1806, VBE2102M, VBFB2102M, VBE2104N, VBE2305, 10N60, VBE2311, VBE2317, VBE2338, VBE2412, VBE2509, VBE2610N, VBE2625, VBE2658

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