VBE3310 PDF and Equivalents Search

 

VBE3310 PDF Specs and Replacement


   Type Designator: VBE3310
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009(typ) Ohm
   Package: TO252
 

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VBE3310 PDF Specs

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VBE3310

VBE3310 www.VBsemi.com Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.009 at VGS = 10 V 32 30 81 nC 0.015 at VGS = 4.5 V 28 APPLICATIONS OR-ing Server TO-252 DC/DC D-PAK D1/D2 G1 G1 S1 S1 N -channel N -ch... See More ⇒

Detailed specifications: VBE2311 , VBE2317 , VBE2338 , VBE2412 , VBE2509 , VBE2610N , VBE2625 , VBE2658 , AON7408 , VBE5415 , VBE5638 , VBF2355 , VBFB1101M , VBFB1102M , VBFB1104N , VBFB1203M , VBFB1208N .

Keywords - VBE3310 MOSFET specs

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