VBE3310 Datasheet. Specs and Replacement

Type Designator: VBE3310  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 typ Ohm

Package: TO252

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VBE3310 datasheet

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VBE3310

VBE3310 www.VBsemi.com Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.009 at VGS = 10 V 32 30 81 nC 0.015 at VGS = 4.5 V 28 APPLICATIONS OR-ing Server TO-252 DC/DC D-PAK D1/D2 G1 G1 S1 S1 N -channel N -ch... See More ⇒

Detailed specifications: VBE2311, VBE2317, VBE2338, VBE2412, VBE2509, VBE2610N, VBE2625, VBE2658, 2N7000, VBE5415, VBE5638, VBF2355, VBFB1101M, VBFB1102M, VBFB1104N, VBFB1203M, VBFB1208N

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