All MOSFET. VBE3310 Datasheet

 

VBE3310 Datasheet and Replacement


   Type Designator: VBE3310
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009(typ) Ohm
   Package: TO252
 

 VBE3310 substitution

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VBE3310 Datasheet (PDF)

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VBE3310

VBE3310www.VBsemi.comDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.009 at VGS = 10 V 3230 81 nC0.015 at VGS = 4.5 V 28APPLICATIONS OR-ing ServerTO-252 DC/DCD-PAKD1/D2 G1 G1S1 S1 N -channel N -ch

Datasheet: VBE2311 , VBE2317 , VBE2338 , VBE2412 , VBE2509 , VBE2610N , VBE2625 , VBE2658 , 2N7000 , VBE5415 , VBE5638 , VBF2355 , VBFB1101M , VBFB1102M , VBFB1104N , VBFB1203M , VBFB1208N .

History: PE532DY | OSG60R1K8PF

Keywords - VBE3310 MOSFET datasheet

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