All MOSFET. VBE3310 Datasheet

 

VBE3310 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBE3310
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 171 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009(typ) Ohm
   Package: TO252

 VBE3310 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBE3310 Datasheet (PDF)

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 vbe3310.pdf

VBE3310 VBE3310

VBE3310www.VBsemi.comDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.009 at VGS = 10 V 3230 81 nC0.015 at VGS = 4.5 V 28APPLICATIONS OR-ing ServerTO-252 DC/DCD-PAKD1/D2 G1 G1S1 S1 N -channel N -ch

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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