VBE5415 Datasheet. Specs and Replacement

Type Designator: VBE5415  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 108 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 282 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO252-4L

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VBE5415 datasheet

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VBE5415

VBE5415 www.VBsemi.com N- and P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET N-CHANNEL P-CHANNEL d 100 % Rg and UIS Tested VDS (V) 40 - 40 RDS(on) ( ) at VGS = 10 V 0.014 0.014 RDS(on) ( ) at VGS = 4.5 V 0.016 0.016 APPLICATIONS ID (A) 50 - 50 CCFL Inverter Configuration N- and P-Pair TO-252-4L D-PAK D1/D2 D1/D2 Top V... See More ⇒

Detailed specifications: VBE2317, VBE2338, VBE2412, VBE2509, VBE2610N, VBE2625, VBE2658, VBE3310, STP75NF75, VBE5638, VBF2355, VBFB1101M, VBFB1102M, VBFB1104N, VBFB1203M, VBFB1208N, VBFB1303

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