All MOSFET. VBE5415 Datasheet

 

VBE5415 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBE5415
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 108 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 310 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 282 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO252-4L

 VBE5415 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBE5415 Datasheet (PDF)

 ..1. Size:1018K  cn vbsemi
 vbe5415.pdf

VBE5415 VBE5415

VBE5415www.VBsemi.com N- and P-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETN-CHANNEL P-CHANNELd 100 % Rg and UIS TestedVDS (V) 40 - 40RDS(on) () at VGS = 10 V 0.014 0.014RDS(on) () at VGS = 4.5 V 0.016 0.016APPLICATIONSID (A) 50 - 50 CCFL InverterConfiguration N- and P-PairTO-252-4L D-PAK D1/D2 D1/D2 Top V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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