All MOSFET. VBE5415 Datasheet

 

VBE5415 Datasheet and Replacement


   Type Designator: VBE5415
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 108 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 282 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO252-4L
 

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VBE5415 Datasheet (PDF)

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VBE5415

VBE5415www.VBsemi.com N- and P-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETN-CHANNEL P-CHANNELd 100 % Rg and UIS TestedVDS (V) 40 - 40RDS(on) () at VGS = 10 V 0.014 0.014RDS(on) () at VGS = 4.5 V 0.016 0.016APPLICATIONSID (A) 50 - 50 CCFL InverterConfiguration N- and P-PairTO-252-4L D-PAK D1/D2 D1/D2 Top V

Datasheet: VBE2317 , VBE2338 , VBE2412 , VBE2509 , VBE2610N , VBE2625 , VBE2658 , VBE3310 , IRFP260 , VBE5638 , VBF2355 , VBFB1101M , VBFB1102M , VBFB1104N , VBFB1203M , VBFB1208N , VBFB1303 .

History: HAT2286C

Keywords - VBE5415 MOSFET datasheet

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