All MOSFET. VBE5638 Datasheet

 

VBE5638 Datasheet and Replacement


   Type Designator: VBE5638
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03(typ) Ohm
   Package: TO252
 

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VBE5638 Datasheet (PDF)

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VBE5638

VBE5638www.VBsemi.comN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.030 at VGS = 10 V 35 TrenchFET Power MOSFETN-Channel 60 6 nC0.033 at VGS = 4.5 V 30 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 19APPLICATIONSP-Channel - 60 8 nC0.060 at VGS = -

Datasheet: VBE2338 , VBE2412 , VBE2509 , VBE2610N , VBE2625 , VBE2658 , VBE3310 , VBE5415 , SKD502T , VBF2355 , VBFB1101M , VBFB1102M , VBFB1104N , VBFB1203M , VBFB1208N , VBFB1303 , VBFB1311 .

History: VBE2412 | SI8851EDB

Keywords - VBE5638 MOSFET datasheet

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