VBE5638 Datasheet. Specs and Replacement

Type Designator: VBE5638  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 84 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 typ Ohm

Package: TO252

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VBE5638 datasheet

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VBE5638

VBE5638 www.VBsemi.com N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.030 at VGS = 10 V 35 TrenchFET Power MOSFET N-Channel 60 6 nC 0.033 at VGS = 4.5 V 30 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 19 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS = -... See More ⇒

Detailed specifications: VBE2338, VBE2412, VBE2509, VBE2610N, VBE2625, VBE2658, VBE3310, VBE5415, AON7408, VBF2355, VBFB1101M, VBFB1102M, VBFB1104N, VBFB1203M, VBFB1208N, VBFB1303, VBFB1311

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.