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VBF2355 PDF Specs and Replacement


   Type Designator: VBF2355
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056(typ) Ohm
   Package: TO251
 

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VBF2355 PDF Specs

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VBF2355

VBF2355 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.056at VGS = - 10 V - 20 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.072 at VGS = - 4.5 V - 15 APPLICATIONS Load Switch TO-251 Notebook Adaptor Switch S G Drain Connected to Drain... See More ⇒

Detailed specifications: VBE2412 , VBE2509 , VBE2610N , VBE2625 , VBE2658 , VBE3310 , VBE5415 , VBE5638 , 2N7002 , VBFB1101M , VBFB1102M , VBFB1104N , VBFB1203M , VBFB1208N , VBFB1303 , VBFB1311 , VBFB1405 .

Keywords - VBF2355 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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