VBF2355 Datasheet. Specs and Replacement
Type Designator: VBF2355 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 205 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 typ Ohm
Package: TO251
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VBF2355 datasheet
vbf2355.pdf
VBF2355 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.056at VGS = - 10 V - 20 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.072 at VGS = - 4.5 V - 15 APPLICATIONS Load Switch TO-251 Notebook Adaptor Switch S G Drain Connected to Drain... See More ⇒
Detailed specifications: VBE2412, VBE2509, VBE2610N, VBE2625, VBE2658, VBE3310, VBE5415, VBE5638, IRF9540N, VBFB1101M, VBFB1102M, VBFB1104N, VBFB1203M, VBFB1208N, VBFB1303, VBFB1311, VBFB1405
Keywords - VBF2355 MOSFET specs
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MOSFET Parameters. How They Affect Each Other
History: VBE3310 | FDMS8880 | FDH50N50 | AP01P10I | STF28N60M2 | JMTG016N04A | VBE5415
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