All MOSFET. VBF2355 Datasheet

 

VBF2355 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBF2355
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056(typ) Ohm
   Package: TO251

 VBF2355 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBF2355 Datasheet (PDF)

 ..1. Size:921K  cn vbsemi
 vbf2355.pdf

VBF2355 VBF2355

VBF2355www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.056at VGS = - 10 V - 20 100 % Rg TestedRoHS- 30 19 nCCOMPLIANT 100 % UIS Tested0.072 at VGS = - 4.5 V - 15APPLICATIONS Load SwitchTO-251 Notebook Adaptor SwitchSGDrain Connected toDrain

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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