VBF2355 PDF Specs and Replacement
Type Designator: VBF2355
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 205 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056(typ) Ohm
Package: TO251
VBF2355 substitution
VBF2355 PDF Specs
vbf2355.pdf
VBF2355 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.056at VGS = - 10 V - 20 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.072 at VGS = - 4.5 V - 15 APPLICATIONS Load Switch TO-251 Notebook Adaptor Switch S G Drain Connected to Drain... See More ⇒
Detailed specifications: VBE2412 , VBE2509 , VBE2610N , VBE2625 , VBE2658 , VBE3310 , VBE5415 , VBE5638 , 2N7002 , VBFB1101M , VBFB1102M , VBFB1104N , VBFB1203M , VBFB1208N , VBFB1303 , VBFB1311 , VBFB1405 .
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