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VBI1101M PDF Specs and Replacement


   Type Designator: VBI1101M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.102(typ) Ohm
   Package: SOT89
 

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VBI1101M PDF Specs

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VBI1101M

VBI1101M www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.102 at VGS = 10 V 4.2 0.120 at VGS = 6 V 100 3.8 2.9 nC 0.125 at VGS = 4.5 V 3.6 APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVs D ... See More ⇒

Detailed specifications: VBFB1615 , VBFB1630 , VBFB165R02 , VBFB165R04 , VBFB2317 , VBFB2412 , VBFB2610N , VBFB2658 , IRF530 , VBI1322 , VBI1638 , VBI1695 , VBI2338 , VBI2658 , VBJ1101M , VBJ1201K , VBJ1322 .

History: FDMS8570S | DHD035N04 | FDMT800150DC | HSS3407A | CMPFJ176 | FDMS7608S

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