VBI1101M Datasheet. Specs and Replacement

Type Designator: VBI1101M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 67 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.102 typ Ohm

Package: SOT89

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VBI1101M datasheet

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VBI1101M

VBI1101M www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.102 at VGS = 10 V 4.2 0.120 at VGS = 6 V 100 3.8 2.9 nC 0.125 at VGS = 4.5 V 3.6 APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVs D ... See More ⇒

Detailed specifications: VBFB1615, VBFB1630, VBFB165R02, VBFB165R04, VBFB2317, VBFB2412, VBFB2610N, VBFB2658, 12N60, VBI1322, VBI1638, VBI1695, VBI2338, VBI2658, VBJ1101M, VBJ1201K, VBJ1322

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