All MOSFET. VBI1322 Datasheet

 

VBI1322 Datasheet and Replacement


   Type Designator: VBI1322
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: SOT89
 

 VBI1322 substitution

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VBI1322 Datasheet (PDF)

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VBI1322

VBI1322www.VBsemi.com N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise

Datasheet: VBFB1630 , VBFB165R02 , VBFB165R04 , VBFB2317 , VBFB2412 , VBFB2610N , VBFB2658 , VBI1101M , IRLB4132 , VBI1638 , VBI1695 , VBI2338 , VBI2658 , VBJ1101M , VBJ1201K , VBJ1322 , VBJ1638 .

History: SIHF9530S | AP9973GJ-HF | SFF440 | CEDM7004VL

Keywords - VBI1322 MOSFET datasheet

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