VBI1322 Datasheet. Specs and Replacement
Type Designator: VBI1322 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 220 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: SOT89
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VBI1322 datasheet
vbi1322.pdf
VBI1322 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.022 at VGS = 4.5 V 6.8 RoHS 30 10 nC COMPLIANT APPLICATIONS 0.027 at VGS = 2.5 V 6.0 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise ... See More ⇒
Detailed specifications: VBFB1630, VBFB165R02, VBFB165R04, VBFB2317, VBFB2412, VBFB2610N, VBFB2658, VBI1101M, 4435, VBI1638, VBI1695, VBI2338, VBI2658, VBJ1101M, VBJ1201K, VBJ1322, VBJ1638
Keywords - VBI1322 MOSFET specs
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