All MOSFET. VBI1695 Datasheet

 

VBI1695 Datasheet and Replacement


   Type Designator: VBI1695
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076(typ) Ohm
   Package: SOT89
 
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VBI1695 Datasheet (PDF)

 ..1. Size:438K  cn vbsemi
 vbi1695.pdf pdf_icon

VBI1695

VBI1695www.VBsemi.com N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise

 9.1. Size:625K  cn vbsemi
 vbi1638.pdf pdf_icon

VBI1695

VBI1638www.VBsemi.comN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.030 at VGS = 10 V 8.0 TrenchFET Power MOSFETs600.036 at VGS = 4.5 V 6.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDDGSG D S N-Channel MOSFET ABSOLUTE MA

Datasheet: VBFB165R04 , VBFB2317 , VBFB2412 , VBFB2610N , VBFB2658 , VBI1101M , VBI1322 , VBI1638 , IRFP250 , VBI2338 , VBI2658 , VBJ1101M , VBJ1201K , VBJ1322 , VBJ1638 , VBJ1695 , VBJ2102M .

History: KP777B

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