All MOSFET. VBI2338 Datasheet

 

VBI2338 Datasheet and Replacement


   Type Designator: VBI2338
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.050(typ) Ohm
   Package: SOT89
 

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VBI2338 Datasheet (PDF)

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VBI2338

VBI2338www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET ABS

Datasheet: VBFB2317 , VBFB2412 , VBFB2610N , VBFB2658 , VBI1101M , VBI1322 , VBI1638 , VBI1695 , 20N50 , VBI2658 , VBJ1101M , VBJ1201K , VBJ1322 , VBJ1638 , VBJ1695 , VBJ2102M , VBJ2456 .

History: QM3014S | VBZE20P03 | MTN138ZN3 | NTLUD3A260PZ | GSM9435WS | AFN04N60T220FT | DMN5L06DMKQ

Keywords - VBI2338 MOSFET datasheet

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