VBJ1101M Datasheet. Specs and Replacement

Type Designator: VBJ1101M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.110 typ Ohm

Package: SOT223

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VBJ1101M datasheet

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VBJ1101M

VBJ1101M www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs 100 0.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET ... See More ⇒

Detailed specifications: VBFB2610N, VBFB2658, VBI1101M, VBI1322, VBI1638, VBI1695, VBI2338, VBI2658, STP80NF70, VBJ1201K, VBJ1322, VBJ1638, VBJ1695, VBJ2102M, VBJ2456, VBJ2658, VBK1270

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