All MOSFET. VBJ1101M Datasheet

 

VBJ1101M Datasheet and Replacement


   Type Designator: VBJ1101M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.110(typ) Ohm
   Package: SOT223
 

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VBJ1101M Datasheet (PDF)

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VBJ1101M

VBJ1101Mwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET

Datasheet: VBFB2610N , VBFB2658 , VBI1101M , VBI1322 , VBI1638 , VBI1695 , VBI2338 , VBI2658 , IRFZ24N , VBJ1201K , VBJ1322 , VBJ1638 , VBJ1695 , VBJ2102M , VBJ2456 , VBJ2658 , VBK1270 .

History: OSG70R1K4FF | PMZ320UPE | IXTA4N150HV | SLD60R380S2

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