VBJ1101M PDF and Equivalents Search

 

VBJ1101M PDF Specs and Replacement


   Type Designator: VBJ1101M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.110(typ) Ohm
   Package: SOT223
 

 VBJ1101M substitution

   - MOSFET ⓘ Cross-Reference Search

 

VBJ1101M PDF Specs

 ..1. Size:432K  cn vbsemi
 vbj1101m.pdf pdf_icon

VBJ1101M

VBJ1101M www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs 100 0.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET ... See More ⇒

Detailed specifications: VBFB2610N , VBFB2658 , VBI1101M , VBI1322 , VBI1638 , VBI1695 , VBI2338 , VBI2658 , TK10A60D , VBJ1201K , VBJ1322 , VBJ1638 , VBJ1695 , VBJ2102M , VBJ2456 , VBJ2658 , VBK1270 .

Keywords - VBJ1101M MOSFET specs

 VBJ1101M cross reference
 VBJ1101M equivalent finder
 VBJ1101M pdf lookup
 VBJ1101M substitution
 VBJ1101M replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


 
.