All MOSFET. VBJ1101M Datasheet

 

VBJ1101M Datasheet and Replacement


   Type Designator: VBJ1101M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 10 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.110(typ) Ohm
   Package: SOT223
      - MOSFET Cross-Reference Search

 

VBJ1101M Datasheet (PDF)

 ..1. Size:432K  cn vbsemi
 vbj1101m.pdf pdf_icon

VBJ1101M

VBJ1101Mwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPB22N03S4L-15 | LSC65R280HT | 2SK3700

Keywords - VBJ1101M MOSFET datasheet

 VBJ1101M cross reference
 VBJ1101M equivalent finder
 VBJ1101M lookup
 VBJ1101M substitution
 VBJ1101M replacement

 

 
Back to Top

 


 
.