VBJ1201K Datasheet. Specs and Replacement

Type Designator: VBJ1201K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: SOT223

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VBJ1201K datasheet

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VBJ1201K

VBJ1201K www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Available in tape and reel VDS (V) 200 Dynamic dV/dt rating RDS(on) ( )VGS = 10 V 1.2 Repetitive avalanche rated Qg (Max.) (nC) 8.2 Fast switching Qgs (nC) 1.8 Ease of paralleling Available Qgd (nC) 4.5 Simple drive requirements Configuration Single D SOT-223 D G S D G... See More ⇒

Detailed specifications: VBFB2658, VBI1101M, VBI1322, VBI1638, VBI1695, VBI2338, VBI2658, VBJ1101M, 5N60, VBJ1322, VBJ1638, VBJ1695, VBJ2102M, VBJ2456, VBJ2658, VBK1270, VBK162K

Keywords - VBJ1201K MOSFET specs

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