All MOSFET. VBJ1201K Datasheet

 

VBJ1201K MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBJ1201K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.2(max) nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: SOT223

 VBJ1201K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBJ1201K Datasheet (PDF)

 ..1. Size:625K  cn vbsemi
 vbj1201k.pdf

VBJ1201K VBJ1201K

VBJ1201Kwww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Available in tape and reelVDS (V) 200 Dynamic dV/dt ratingRDS(on) ()VGS = 10 V 1.2 Repetitive avalanche ratedQg (Max.) (nC) 8.2 Fast switchingQgs (nC) 1.8 Ease of parallelingAvailableQgd (nC) 4.5 Simple drive requirementsConfiguration SingleDSOT-223DGSDG

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPP065N04NG | APTC90AM60SCTG | APT60M75JVR | FQI27N25 | AO8806

 

 
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