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VBJ1201K PDF Specs and Replacement


   Type Designator: VBJ1201K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: SOT223
 

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VBJ1201K PDF Specs

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VBJ1201K

VBJ1201K www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Available in tape and reel VDS (V) 200 Dynamic dV/dt rating RDS(on) ( )VGS = 10 V 1.2 Repetitive avalanche rated Qg (Max.) (nC) 8.2 Fast switching Qgs (nC) 1.8 Ease of paralleling Available Qgd (nC) 4.5 Simple drive requirements Configuration Single D SOT-223 D G S D G... See More ⇒

Detailed specifications: VBFB2658 , VBI1101M , VBI1322 , VBI1638 , VBI1695 , VBI2338 , VBI2658 , VBJ1101M , AO4407 , VBJ1322 , VBJ1638 , VBJ1695 , VBJ2102M , VBJ2456 , VBJ2658 , VBK1270 , VBK162K .

Keywords - VBJ1201K MOSFET specs

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