VBJ2102M Datasheet. Specs and Replacement

Type Designator: VBJ2102M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 51 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.200 typ Ohm

Package: SOT223

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VBJ2102M datasheet

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VBJ2102M

VBJ2102M www.VBsemi.com P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100% Rg and UIS Tested 0.200 at VGS = - 10 V - 3.0 - 100 13.2 nC 0.230 at VGS = - 6 V - 2.4 APPLICATIONS Available Active Clamp in Intermediate DC/ DC Power Supplies S H-Bridge High Side Switch for Lighting Application ... See More ⇒

Detailed specifications: VBI1695, VBI2338, VBI2658, VBJ1101M, VBJ1201K, VBJ1322, VBJ1638, VBJ1695, 10N65, VBJ2456, VBJ2658, VBK1270, VBK162K, VBK2298, VBK3215N, VBK362K, VBK4223N

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