All MOSFET. VBJ2102M Datasheet

 

VBJ2102M Datasheet and Replacement


   Type Designator: VBJ2102M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.200(typ) Ohm
   Package: SOT223
 

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VBJ2102M Datasheet (PDF)

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VBJ2102M

VBJ2102Mwww.VBsemi.comP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100% Rg and UIS Tested0.200 at VGS = - 10 V - 3.0- 100 13.2 nC0.230 at VGS = - 6 V - 2.4APPLICATIONSAvailable Active Clamp in Intermediate DC/DC Power SuppliesS H-Bridge High Side Switch forLighting Application

Datasheet: VBI1695 , VBI2338 , VBI2658 , VBJ1101M , VBJ1201K , VBJ1322 , VBJ1638 , VBJ1695 , P0903BDG , VBJ2456 , VBJ2658 , VBK1270 , VBK162K , VBK2298 , VBK3215N , VBK362K , VBK4223N .

History: HTL140N02 | TSM3548DCX6 | FQD11P06TF | AP75T12GI-HF | CEP540L | SIHFBC30A | SM6107PSU

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