VBJ2102M Datasheet and Replacement
Type Designator: VBJ2102M
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 51 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.200(typ) Ohm
Package: SOT223
VBJ2102M substitution
VBJ2102M Datasheet (PDF)
vbj2102m.pdf

VBJ2102Mwww.VBsemi.comP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100% Rg and UIS Tested0.200 at VGS = - 10 V - 3.0- 100 13.2 nC0.230 at VGS = - 6 V - 2.4APPLICATIONSAvailable Active Clamp in Intermediate DC/DC Power SuppliesS H-Bridge High Side Switch forLighting Application
Datasheet: VBI1695 , VBI2338 , VBI2658 , VBJ1101M , VBJ1201K , VBJ1322 , VBJ1638 , VBJ1695 , P0903BDG , VBJ2456 , VBJ2658 , VBK1270 , VBK162K , VBK2298 , VBK3215N , VBK362K , VBK4223N .
History: MDP13N50GTH
Keywords - VBJ2102M MOSFET datasheet
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History: MDP13N50GTH



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