VBJ2456 Datasheet. Specs and Replacement

Type Designator: VBJ2456  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: SOT223

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VBJ2456 datasheet

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VBJ2456

VBJ2456 www.VBsemi.com P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS ... See More ⇒

Detailed specifications: VBI2338, VBI2658, VBJ1101M, VBJ1201K, VBJ1322, VBJ1638, VBJ1695, VBJ2102M, IRF1407, VBJ2658, VBK1270, VBK162K, VBK2298, VBK3215N, VBK362K, VBK4223N, VBK5213N

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