VBK1270 Datasheet. Specs and Replacement

Type Designator: VBK1270  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 400 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT323

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VBK1270 datasheet

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VBK1270

VBK1270 www.VBsemi.com N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.036 at VGS = 10 V 4 TrenchFET Power MOSFET 20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM 0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC ... See More ⇒

Detailed specifications: VBJ1101M, VBJ1201K, VBJ1322, VBJ1638, VBJ1695, VBJ2102M, VBJ2456, VBJ2658, TK10A60D, VBK162K, VBK2298, VBK3215N, VBK362K, VBK4223N, VBK5213N, VBK8238, VBL1101M

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.