All MOSFET. VBK1270 Datasheet

 

VBK1270 Datasheet and Replacement


   Type Designator: VBK1270
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 400 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT323
 

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VBK1270 Datasheet (PDF)

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VBK1270

VBK1270www.VBsemi.comN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC

Datasheet: VBJ1101M , VBJ1201K , VBJ1322 , VBJ1638 , VBJ1695 , VBJ2102M , VBJ2456 , VBJ2658 , 13N50 , VBK162K , VBK2298 , VBK3215N , VBK362K , VBK4223N , VBK5213N , VBK8238 , VBL1101M .

History: TPD65R280D | QM2403C1 | IRF3709L | QM4014D | BUK9M12-60E | P1010AT | VBZA4407

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