All MOSFET. VBK2298 Datasheet

 

VBK2298 Datasheet and Replacement


   Type Designator: VBK2298
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.080(typ) Ohm
   Package: SOT323
 

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VBK2298 Datasheet (PDF)

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VBK2298

VBK2298www.VBsemi.comP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Convert

Datasheet: VBJ1322 , VBJ1638 , VBJ1695 , VBJ2102M , VBJ2456 , VBJ2658 , VBK1270 , VBK162K , IRFZ46N , VBK3215N , VBK362K , VBK4223N , VBK5213N , VBK8238 , VBL1101M , VBL1101N , VBL1104N .

History: NVMTS0D6N04C

Keywords - VBK2298 MOSFET datasheet

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