VBK2298 Datasheet. Specs and Replacement

Type Designator: VBK2298  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.080 typ Ohm

Package: SOT323

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VBK2298 datasheet

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VBK2298

VBK2298 www.VBsemi.com P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)c Qg (Typ.) Definition 0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET 4.3 nC - 20 0.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC Convert... See More ⇒

Detailed specifications: VBJ1322, VBJ1638, VBJ1695, VBJ2102M, VBJ2456, VBJ2658, VBK1270, VBK162K, STF13NM60N, VBK3215N, VBK362K, VBK4223N, VBK5213N, VBK8238, VBL1101M, VBL1101N, VBL1104N

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