NCE6990D Datasheet. Specs and Replacement
Type Designator: NCE6990D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 69 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: TO263
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NCE6990D datasheet
nce6990d.pdf
Pb Free Product http //www.ncepower.com NCE6990D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6990D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =69V,ID =90A RDS(ON) ... See More ⇒
nce6990.pdf
Pb Free Product http //www.ncepower.com NCE6990 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6990 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =69V,ID =90A RDS(ON) ... See More ⇒
Detailed specifications: NCE65TF180T, NCE65TF360D, NCE65TF360, NCE65TF360F, NCE6802, NCE6890, NCE6890K, NCE6990, IRF1010E, NCE70T180D, NCE70T180, NCE70T180F, NCE70T1K2K, NCE70T1K2I, NCE70T1K2R, NCE70T260D, NCE70T260
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