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NCE6990D Spec and Replacement


   Type Designator: NCE6990D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 69 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
   Package: TO263

 NCE6990D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE6990D Specs

 ..1. Size:435K  ncepower
 nce6990d.pdf pdf_icon

NCE6990D

Pb Free Product http //www.ncepower.com NCE6990D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6990D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =69V,ID =90A RDS(ON) ... See More ⇒

 7.1. Size:399K  ncepower
 nce6990.pdf pdf_icon

NCE6990D

Pb Free Product http //www.ncepower.com NCE6990 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6990 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =69V,ID =90A RDS(ON) ... See More ⇒

Detailed specifications: NCE65TF180T , NCE65TF360D , NCE65TF360 , NCE65TF360F , NCE6802 , NCE6890 , NCE6890K , NCE6990 , IRF9540N , NCE70T180D , NCE70T180 , NCE70T180F , NCE70T1K2K , NCE70T1K2I , NCE70T1K2R , NCE70T260D , NCE70T260 .

History: HGI059N08AL

Keywords - NCE6990D MOSFET specs

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