All MOSFET. STU04N20 Datasheet

 

STU04N20 Datasheet and Replacement


   Type Designator: STU04N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Qg ⓘ - Total Gate Charge: 3 nC
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO252 DPAK
 

 STU04N20 substitution

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STU04N20 Datasheet (PDF)

 ..1. Size:142K  samhop
 stu04n20 std04n20.pdf pdf_icon

STU04N20

STU04N20GreenProductSTD04N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.1.4 @ VGS=10VTO-252 and TO-251 Package.200V 4A 1.6 @ VGS=4.5V GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO

Datasheet: FDD2582 , FDD2670 , STU09N25 , FDD26AN06A0F085 , FDD306P , FDD3510H , STU06L01 , FDD3670 , SKD502T , FDD3672 , STU03N20 , FDD3672F085 , STU03L07 , STU03L01 , FDD3680 , FDD3682F085 , STT812A .

Keywords - STU04N20 MOSFET datasheet

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