STU04N20 Datasheet. Specs and Replacement

Type Designator: STU04N20  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO252 DPAK

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STU04N20 datasheet

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 stu04n20 std04n20.pdf pdf_icon

STU04N20

STU04N20 Green Product STD04N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 1.4 @ VGS=10V TO-252 and TO-251 Package. 200V 4A 1.6 @ VGS=4.5V G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO ... See More ⇒

Detailed specifications: FDD2582, FDD2670, STU09N25, FDD26AN06A0F085, FDD306P, FDD3510H, STU06L01, FDD3670, 18N50, FDD3672, STU03N20, FDD3672F085, STU03L07, STU03L01, FDD3680, FDD3682F085, STT812A

Keywords - STU04N20 MOSFET specs

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