FDD3672F085 Datasheet. Specs and Replacement
Type Designator: FDD3672F085 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 144 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
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FDD3672F085 substitution
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FDD3672F085 datasheet
fdd3672.pdf
March 2010 FDD3672 N-Channel UltraFET Trench MOSFET 100V, 44A, 28m Features Applications rDS(ON) = 24m (Typ.), VGS = 10V, ID = 44A DC/DC converters and Off-Line UPS Qg(tot) = 24nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Synchronous Rectif... See More ⇒
fdd3672 f085.pdf
March 2011 FDD3672_F085 N-Channel UltraFET Trench MOSFET 100V, 44A, 28m Applications Features DC/DC converters and Off-Line UPS Typ rDS(on) = 24m at VGS = 10V, ID = 44A Distributed Power Architectures and VRMs Typ Qg(10) = 24nC at VGS = 10V Primary Switch for 24V and 48V Systems Low Miller Charge Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficie... See More ⇒
fdd3672 f085.pdf
March 2011 FDD3672_F085 N-Channel UltraFET Trench MOSFET 100V, 44A, 28m Applications Features DC/DC converters and Off-Line UPS Typ rDS(on) = 24m at VGS = 10V, ID = 44A Distributed Power Architectures and VRMs Typ Qg(10) = 24nC at VGS = 10V Primary Switch for 24V and 48V Systems Low Miller Charge Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficie... See More ⇒
Detailed specifications: FDD26AN06A0F085, FDD306P, FDD3510H, STU06L01, FDD3670, STU04N20, FDD3672, STU03N20, STP65NF06, STU03L07, STU03L01, FDD3680, FDD3682F085, STT812A, FDD3690, STT6603, FDD3706
Keywords - FDD3672F085 MOSFET specs
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