FDD3672F085 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD3672F085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 144 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 44 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 24 nC
Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm
Package: TO252DPAK
FDD3672F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD3672F085 Datasheet (PDF)
7.1. fdd3672.pdf 
Size:268K _fairchild_semi
March 2010FDD3672N-Channel UltraFET Trench MOSFET100V, 44A, 28mFeatures Applications rDS(ON) = 24m (Typ.), VGS = 10V, ID = 44A DC/DC converters and Off-Line UPS Qg(tot) = 24nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Synchronous Rectif
7.2. fdd3672 f085.pdf Size:111K _fairchild_semi
March 2011FDD3672_F085N-Channel UltraFET Trench MOSFET 100V, 44A, 28m ApplicationsFeatures DC/DC converters and Off-Line UPS Typ rDS(on) = 24m at VGS = 10V, ID = 44A Distributed Power Architectures and VRMs Typ Qg(10) = 24nC at VGS = 10V Primary Switch for 24V and 48V Systems Low Miller Charge Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficie
8.1. fdd3670.pdf Size:67K _fairchild_semi
June 2001 FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 34 A, 100 V. R = 32 m @ V = 10 V DS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 35 m @ V = 6 V DS(ON) GSconverters using either synchronous or conventional switching PWM controllers. Low gate charge (57 nC typical)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
