FDD3672F085 Datasheet and Replacement
Type Designator: FDD3672F085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 144 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 24 nC
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO252 DPAK
FDD3672F085 substitution
FDD3672F085 Datasheet (PDF)
fdd3672.pdf

March 2010FDD3672N-Channel UltraFET Trench MOSFET100V, 44A, 28mFeatures Applications rDS(ON) = 24m (Typ.), VGS = 10V, ID = 44A DC/DC converters and Off-Line UPS Qg(tot) = 24nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Synchronous Rectif
fdd3672 f085.pdf

March 2011FDD3672_F085N-Channel UltraFET Trench MOSFET 100V, 44A, 28m ApplicationsFeatures DC/DC converters and Off-Line UPS Typ rDS(on) = 24m at VGS = 10V, ID = 44A Distributed Power Architectures and VRMs Typ Qg(10) = 24nC at VGS = 10V Primary Switch for 24V and 48V Systems Low Miller Charge Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficie
fdd3672 f085.pdf

March 2011FDD3672_F085N-Channel UltraFET Trench MOSFET 100V, 44A, 28m ApplicationsFeatures DC/DC converters and Off-Line UPS Typ rDS(on) = 24m at VGS = 10V, ID = 44A Distributed Power Architectures and VRMs Typ Qg(10) = 24nC at VGS = 10V Primary Switch for 24V and 48V Systems Low Miller Charge Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficie
Datasheet: FDD26AN06A0F085 , FDD306P , FDD3510H , STU06L01 , FDD3670 , STU04N20 , FDD3672 , STU03N20 , 75N75 , STU03L07 , STU03L01 , FDD3680 , FDD3682F085 , STT812A , FDD3690 , STT6603 , FDD3706 .
History: APQ04SN60AF
Keywords - FDD3672F085 MOSFET datasheet
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FDD3672F085 replacement
History: APQ04SN60AF



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