STT812A Specs and Replacement
Type Designator: STT812A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 21 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.569 Ohm
Package: SOT223
STT812A substitution
- MOSFET ⓘ Cross-Reference Search
STT812A datasheet
stt818b.pdf
STT818B High gain low voltage PNP power transistor Features Very low collector to emitter saturation voltage DC current gain > 100 (hFE) 3 A continuous collector current (IC) Applications Power management in portable equipments SOT23-6L Switching regulator in battery charger applications Description The device is manufactured in low voltage PNP Figure 1. Inter... See More ⇒
Detailed specifications: STU04N20 , FDD3672 , STU03N20 , FDD3672F085 , STU03L07 , STU03L01 , FDD3680 , FDD3682F085 , IRFZ24N , FDD3690 , STT6603 , FDD3706 , FDD3860 , STT626 , FDD390N15A , FDD3N40 , STT622S .
History: FDD3706 | FDD4243 | FDD3682F085 | FDD390N15A
Keywords - STT812A MOSFET specs
STT812A cross reference
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STT812A substitution
STT812A replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FDD3706 | FDD4243 | FDD3682F085 | FDD390N15A
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