STT812A Datasheet and Replacement
Type Designator: STT812A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Cossⓘ - Output Capacitance: 21 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.569 Ohm
Package: SOT223
STT812A substitution
STT812A Datasheet (PDF)
stt812a.pdf
GreenProductSTT812AaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.569 @ VGS=10VSurface Mount Package.80V 1.4A674 @ VGS=4.5V D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=25
stt818b.pdf
STT818BHigh gain low voltage PNP power transistorFeatures Very low collector to emitter saturation voltage DC current gain > 100 (hFE) 3 A continuous collector current (IC)Applications Power management in portable equipmentsSOT23-6L Switching regulator in battery charger applicationsDescriptionThe device is manufactured in low voltage PNP Figure 1. Inter
Datasheet: STU04N20 , FDD3672 , STU03N20 , FDD3672F085 , STU03L07 , STU03L01 , FDD3680 , FDD3682F085 , 8N60 , FDD3690 , STT6603 , FDD3706 , FDD3860 , STT626 , FDD390N15A , FDD3N40 , STT622S .
Keywords - STT812A MOSFET datasheet
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