All MOSFET. STT812A Datasheet

 

STT812A Datasheet and Replacement


   Type Designator: STT812A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Qg ⓘ - Total Gate Charge: 3 nC
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.569 Ohm
   Package: SOT223
 

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STT812A Datasheet (PDF)

 ..1. Size:127K  samhop
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STT812A

GreenProductSTT812AaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.569 @ VGS=10VSurface Mount Package.80V 1.4A674 @ VGS=4.5V D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=25

 9.1. Size:143K  st
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STT812A

STT818BHigh gain low voltage PNP power transistorFeatures Very low collector to emitter saturation voltage DC current gain > 100 (hFE) 3 A continuous collector current (IC)Applications Power management in portable equipmentsSOT23-6L Switching regulator in battery charger applicationsDescriptionThe device is manufactured in low voltage PNP Figure 1. Inter

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History: IRLW640A

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