STT812A Datasheet. Specs and Replacement
Type Designator: STT812A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 21 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.569 Ohm
Package: SOT223
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STT812A substitution
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STT812A datasheet
stt818b.pdf
STT818B High gain low voltage PNP power transistor Features Very low collector to emitter saturation voltage DC current gain > 100 (hFE) 3 A continuous collector current (IC) Applications Power management in portable equipments SOT23-6L Switching regulator in battery charger applications Description The device is manufactured in low voltage PNP Figure 1. Inter... See More ⇒
Detailed specifications: STU04N20, FDD3672, STU03N20, FDD3672F085, STU03L07, STU03L01, FDD3680, FDD3682F085, IRF530, FDD3690, STT6603, FDD3706, FDD3860, STT626, FDD390N15A, FDD3N40, STT622S
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