STT812A MOSFET. Datasheet pdf. Equivalent
Type Designator: STT812A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 1.4 A
Qgⓘ - Total Gate Charge: 3 nC
Cossⓘ - Output Capacitance: 21 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.569 Ohm
Package: SOT223
STT812A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STT812A Datasheet (PDF)
stt812a.pdf
GreenProductSTT812AaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.569 @ VGS=10VSurface Mount Package.80V 1.4A674 @ VGS=4.5V D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=25
stt818b.pdf
STT818BHigh gain low voltage PNP power transistorFeatures Very low collector to emitter saturation voltage DC current gain > 100 (hFE) 3 A continuous collector current (IC)Applications Power management in portable equipmentsSOT23-6L Switching regulator in battery charger applicationsDescriptionThe device is manufactured in low voltage PNP Figure 1. Inter
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HUF75637S3S
History: HUF75637S3S
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