All MOSFET. STT6603 Datasheet

 

STT6603 MOSFET. Datasheet pdf. Equivalent

Type Designator: STT6603

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2.08 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2.5 A

Drain-Source Capacitance (Cd): 65 pF

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: SOT223

STT6603 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STT6603 Datasheet (PDF)

1.1. stt6603.pdf Size:185K _samhop

STT6603
STT6603

Green Product STT6603 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 180 @ VGS=-10V SOT-223 package. -60V -2.5A 240 @ VGS=-4.5V D G G S SOT - 223 S (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS S

4.1. stt6602.pdf Size:2997K _secos

STT6603
STT6603

STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 m? ? ? ? P-Ch: -2.3A, -30V, RDS(ON) 120 m? ? ? ? Elektronische Bauelemente N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TSOP-6 DESCRIPTION The STT6602 uses advanced trench technology to A E provide excellent on-resistance and low gate charge. L The complementary

Datasheet: STU03N20 , FDD3672_F085 , STU03L07 , STU03L01 , FDD3680 , FDD3682_F085 , STT812A , FDD3690 , 2SK2611 , FDD3706 , FDD3860 , STT626 , FDD390N15A , FDD3N40 , STT622S , FDD3N50NZ , FDD4141 .

 


STT6603
  STT6603
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