STT6603 MOSFET Datasheet: P-Ch, 60V, 2.5A. Full specification with pinout and replacement list

STT6603 Specs and Replacement

Type Designator: STT6603

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.08 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 65 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: SOT223

STT6603 substitution

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STT6603 datasheet

..1. Size:185K samhop
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Green Product STT6603 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 180 @ VGS=-10V SOT-223 package. -60V -2.5A 240 @ VGS=-4.5V D G G S SOT - 223 S (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS S... See More ⇒

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STT6602 N-Ch 3.3A, 30V, RDS(ON) 65 m P-Ch -2.3A, -30V, RDS(ON) 120 m Elektronische Bauelemente N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of -C specifies halogen and lead-free TSOP-6 DESCRIPTION The STT6602 uses advanced trench technology to A E provide excellent on-resistance and low gate charge. L... See More ⇒

Detailed specifications: STU03N20 , FDD3672F085 , STU03L07 , STU03L01 , FDD3680 , FDD3682F085 , STT812A , FDD3690 , 8N60 , FDD3706 , FDD3860 , STT626 , FDD390N15A , FDD3N40 , STT622S , FDD3N50NZ , FDD4141 .