All MOSFET. STT6603 Datasheet

 

STT6603 Datasheet and Replacement


   Type Designator: STT6603
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.08 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: SOT223
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STT6603 Datasheet (PDF)

 ..1. Size:185K  samhop
 stt6603.pdf pdf_icon

STT6603

GreenProductSTT6603aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.180 @ VGS=-10VSOT-223 package.-60V -2.5A240 @ VGS=-4.5VDGGSSOT - 223S(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSS

 8.1. Size:2997K  secos
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STT6603

STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m Elektronische Bauelemente N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of -C specifies halogen and lead-free TSOP-6 DESCRIPTION The STT6602 uses advanced trench technology to AEprovide excellent on-resistance and low gate charge. L

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History: WMM11N80M3 | IRFI7536G | RFP2N10L | FDMS9620S | AM2314NE

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