FDD3860 MOSFET Datasheet: N-Ch, 100V, 42A. Full specification with pinout and replacement list

FDD3860 Specs and Replacement

Type Designator: FDD3860

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO252 DPAK

FDD3860 substitution

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FDD3860 datasheet

..1. Size:330K fairchild semi
fdd3860.pdf pdf_icon

October 2008 FDD3860 tm N-Channel PowerTrench MOSFET 100V, 29A, 36m Features General Description Max rDS(on) = 36m at VGS = 10V, ID = 5.9A This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor s advanced Power Trench process. This part is High performance trench technology for extremely low rDS(on) tailored for low rDS(on) and low Qg figure of merit, ... See More ⇒

..2. Size:337K onsemi
fdd3860.pdf pdf_icon

FDD3860 N-Channel PowerTrench MOSFET 100 V, 29 A, 36 m Features General Description Max rDS(on) = 36 m at VGS = 10 V, ID = 5.9 A This N-Channel MOSFET is rugged gate version of ON Semiconductor s advanced Power Trench process. This part is High Performance Trench Technology for Extremely Low tailored for low rDS(on) and low Qg figure of merit, with avalanche rDS(on) ru... See More ⇒

Detailed specifications: STU03L07 , STU03L01 , FDD3680 , FDD3682F085 , STT812A , FDD3690 , STT6603 , FDD3706 , 75N75 , STT626 , FDD390N15A , FDD3N40 , STT622S , FDD3N50NZ , FDD4141 , FDD4141F085 , FDD4243 .