All MOSFET. FDD3860 Datasheet

 

FDD3860 Datasheet and Replacement


   Type Designator: FDD3860
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO252 DPAK
 

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FDD3860 Datasheet (PDF)

 ..1. Size:330K  fairchild semi
 fdd3860.pdf pdf_icon

FDD3860

October 2008FDD3860tmN-Channel PowerTrench MOSFET 100V, 29A, 36mFeatures General Description Max rDS(on) = 36m at VGS = 10V, ID = 5.9A This N-Channel MOSFET is rugged gate version of Fairchild Semiconductors advanced Power Trench process. This part is High performance trench technology for extremely low rDS(on)tailored for low rDS(on) and low Qg figure of merit,

 ..2. Size:337K  onsemi
 fdd3860.pdf pdf_icon

FDD3860

FDD3860N-Channel PowerTrench MOSFET100 V, 29 A, 36 mFeaturesGeneral Description Max rDS(on) = 36 m at VGS = 10 V, ID = 5.9 AThis N-Channel MOSFET is rugged gate version of ON Semiconductors advanced Power Trench process. This part is High Performance Trench Technology for Extremely Lowtailored for low rDS(on) and low Qg figure of merit, with avalanche rDS(on)ru

Datasheet: STU03L07 , STU03L01 , FDD3680 , FDD3682F085 , STT812A , FDD3690 , STT6603 , FDD3706 , K2611 , STT626 , FDD390N15A , FDD3N40 , STT622S , FDD3N50NZ , FDD4141 , FDD4141F085 , FDD4243 .

Keywords - FDD3860 MOSFET datasheet

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