FDD3860 Datasheet. Specs and Replacement

Type Designator: FDD3860  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO252 DPAK

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FDD3860 datasheet

 ..1. Size:330K  fairchild semi
 fdd3860.pdf pdf_icon

FDD3860

October 2008 FDD3860 tm N-Channel PowerTrench MOSFET 100V, 29A, 36m Features General Description Max rDS(on) = 36m at VGS = 10V, ID = 5.9A This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor s advanced Power Trench process. This part is High performance trench technology for extremely low rDS(on) tailored for low rDS(on) and low Qg figure of merit, ... See More ⇒

 ..2. Size:337K  onsemi
 fdd3860.pdf pdf_icon

FDD3860

FDD3860 N-Channel PowerTrench MOSFET 100 V, 29 A, 36 m Features General Description Max rDS(on) = 36 m at VGS = 10 V, ID = 5.9 A This N-Channel MOSFET is rugged gate version of ON Semiconductor s advanced Power Trench process. This part is High Performance Trench Technology for Extremely Low tailored for low rDS(on) and low Qg figure of merit, with avalanche rDS(on) ru... See More ⇒

Detailed specifications: STU03L07, STU03L01, FDD3680, FDD3682F085, STT812A, FDD3690, STT6603, FDD3706, IRF730, STT626, FDD390N15A, FDD3N40, STT622S, FDD3N50NZ, FDD4141, FDD4141F085, FDD4243

Keywords - FDD3860 MOSFET specs

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